Patent 2,569,347, filed 26 June 1948.
Metal Oxide Semiconductor. Usually used when referring to a specific type of transistor which uses this type of semiconductor material: the Field Effect Transistor (FET).
Transistor.
SILICON or common sand with doping of the right ratio to make a transistor. three layers of semiconductor material
uni junction transistor
Metal Oxide Semiconductor Field Effect Transistor
No.
Transistor Diode Resistor Capacitor
The transistor was created by researchers at the university of Geneva. "The first patent for a field-effect transistor principle was filed in Canada... 1925. In 1934 German physicist Dr. Oskar Heil patented another field-effect transistor."
metal oxide semiconductor field effect transistor
Transistor is usually constructed using semiconductor elements. Semiconductor elements refers to partial conductors. They are neither full nor non conductors. that semiconductor elements may be called as transistor elements
Transistor.
A very high speed bipolar junction transistor having a metal-semiconductor emitter base junction instead of a semiconductor-semiconductor emitter base junction.