because the fet is made out of carbon metal oxide and the bjt is made out of silicon or germanium
Advantages:- 1- mosfet are small compare to bjt's so it fabricated easily and space saving scheme on the ic's 2- mosfet's input impedance are very high so they do not load the circuits. loading effect doesn't arise. 3- operating frequency is very high so may be used at higher frequencies. 4- used in digital circuits for it's reliability. 5- effect of noise is less than bjt. so high signal to noise ratio. 6-mosfets are unipolar devices so reverse saturation current doesn't exist. 7- it consume less D.C power rather than BJT. Disadvantages:- handling is not easy- Mosfet is very sensitive to electrostatic charge so it may be destroy when you touch the pins of a mosfet devices by hand. trans conductance is low than BJT.
1-BJT is bipolar while JFET is unipolar. 2-BJT has low input impedence while JFET has high input impedence. 3-JFET has low power discipation as compared to BJT. 4-JFET has low noise as compared to BJT. 5-BJT is current controlled while JFET is voltage controlled. 6-JFET is mostly used in digital circuits.
They are NPN and PNP. BJT mean bipolar junction transistors. there are two P-N junctions in BJT transisters.
sit on dick
You can use an npn or a pnp bjt in a common emitter amplifier circuit. The decision of which one to use is based on whether you want the collector and base to be more positive (npn) or more negative (pnp) than the emitter.
Advantages:- 1- mosfet are small compare to bjt's so it fabricated easily and space saving scheme on the ic's 2- mosfet's input impedance are very high so they do not load the circuits. loading effect doesn't arise. 3- operating frequency is very high so may be used at higher frequencies. 4- used in digital circuits for it's reliability. 5- effect of noise is less than bjt. so high signal to noise ratio. 6-mosfets are unipolar devices so reverse saturation current doesn't exist. 7- it consume less D.C power rather than BJT. Disadvantages:- handling is not easy- Mosfet is very sensitive to electrostatic charge so it may be destroy when you touch the pins of a mosfet devices by hand. trans conductance is low than BJT.
generally bjt is faster than fets...because of many intrinsic junction capacitances between ...source and drain and bulk and gate,,,.. but now a days due to advancement in scaling fet is reduced in size sooo much that it became faster than bjt... mosfet is faster because of scaling. small channel length. even though it is slower but distance to be travelled is less
Advantages:- 1- mosfet are small compare to bjt's so it fabricated easily and space saving scheme on the ic's 2- mosfet's input impedance are very high so they do not load the circuits. loading effect doesn't arise. 3- operating frequency is very high so may be used at higher frequencies. 4- used in digital circuits for it's reliability. 5- effect of noise is less than bjt. so high signal to noise ratio. 6-mosfets are unipolar devices so reverse saturation current doesn't exist. 7- it consume less D.C power rather than BJT. Disadvantages:- handling is not easy- Mosfet is very sensitive to electrostatic charge so it may be destroy when you touch the pins of a mosfet devices by hand. trans conductance is low than BJT.
The signal gain of a CE BJT amplifier is hFe or collector resistance divided by emitter resistance, whichever is less.
Bjt is bipolar because in bjt the conduction of current is due to the electrons as well as holes
Unless it is some leet speak term I am not aware of, BJTstands for Bipolar Junction Transistor or (less common) Business Japanese Proficiency Test.
You dont. A UJT is a much simple device than either of those BJT's Maybe you want to make a multivibrator out of BJT's?
FET's (field effect transistors) are unipolar devices because unlike BJT's that use both electron and hole current, they operate only with one type of charge carrier. BJT is a current-controlled device; that is the base current controls the amount of collector current. FET is a voltage-controlled device, where voltave between two of the terminals (gate and source) controls the current through the device. BJT's have a low input impedance ( ~1k -3k ohms), while FET's have a very high input impedance (~10^11 ohms). Consequently FET's have a lower power consumption. BJT's produce more noise than FET's . FET's have a slower switching speed . BJT's are subject to thermal runway while FET's are immune to this problem. BJT's have a higher cutoff frequencey and a higher maximum current then FET's. FET's are easy to fabricate in large scale and have higher element density the BJT's.
Disadvantage:Easy to damage when compared to BJT
Bipolar junction transistor(BJT)
Mainly there are two types of transistors. They are BJT (Bipolar Junction Transistors) and FET(Field Effect Transisters). In BJT, there are two types called PNP and NPN. Actually NPN means a BJT transister.
mainly i will tell ttwo advantages:- 1)in FET "thermal runaway" never occurs but in bjt it occurs easily...thermal runaway means overheating and damage of fet due to different biasing voltages.. 2) since FET is a unipolar device so only one carrier type is required here ,but bjt is a bipolar device .. 3) FET is smaller in size than BJT of same rating. i mean to say that at the place of 10 bjts we can use 90 FETs ..so area cosumption is less