Due to differences in carrier mobility between P and N type semiconductor, for similarly doped channels the channel of a PMOS FET will be a bit wider than the channel of an NMOS FET so that they both have identical channel resistance. To make the channel wider the PMOS FET will take a larger chip area.
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NMOS is built with n-type source and drain and a p-type substrate, while PMOS is built with p-type source and drain and a n-type substrate. In a NMOS, carriers are electrons, while in a PMOS, carriers are holes. When a high voltage is applied to the gate, NMOS will conduct, while PMOS will not. Furthermore, when a low voltage is applied in the gate, NMOS will not conduct and PMOS will conduct. NMOS are considered to be faster than PMOS, since the carriers in NMOS, which are electrons, travel twice as fast as holes, which are the carriers in PMOS. But PMOS devices are more immune to noise than NMOS devices. Furthermore, NMOS ICs would be smaller than PMOS ICs (that give the same functionality), since the NMOS can provide one-half of the impedance provided by a PMOS (which has the same geometry and operating conditions).
yes
it becomes a buffer
Parasitic capacitances form across every depletion region there's also a capacitance between the conductive leads to the terminals. For simplicity they are usually just lumped to each of the terminals of the transistor. Gate, Drain, Source and Substrate. If substrate is shorted to source creating typical 3 terminal representation then that half of those parasitic capacitances combine and Css (source-substrate) = 0. Cgd Cgs Cds (primarily from drain to substrate, not drain to source)
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CMOS is a type of technology for constructing integrated circuits. One advantage of this setup is less waste heat compared to NMOS logic or transistor-transistor logic.
A rest transistor is either a pMOS or nMOS high VT transistor and is utilized as a change to close off force supplies to parts of a configuration in standby mode. The pMOS rest transistor is utilized to switch VDD supply and henceforth is known as a "header switch."
PMOS - (drain + source) = p-type doping NMOS - (drain + source) = n-type doping :)
because pmos has low mobility . the inverter threshold voltage can be shifted to the middle and the inverter is more symmetrical in terms of transistor times.
These circuits use nMOS for implementation of a whole gate + one pMOS which is connected between positive supply and nMOS.
NMOS is built with n-type source and drain and a p-type substrate, while PMOS is built with p-type source and drain and a n-type substrate. In a NMOS, carriers are electrons, while in a PMOS, carriers are holes. When a high voltage is applied to the gate, NMOS will conduct, while PMOS will not. Furthermore, when a low voltage is applied in the gate, NMOS will not conduct and PMOS will conduct. NMOS are considered to be faster than PMOS, since the carriers in NMOS, which are electrons, travel twice as fast as holes, which are the carriers in PMOS. But PMOS devices are more immune to noise than NMOS devices. Furthermore, NMOS ICs would be smaller than PMOS ICs (that give the same functionality), since the NMOS can provide one-half of the impedance provided by a PMOS (which has the same geometry and operating conditions).
when n- channel mosfets are used to construct a circuit these are called nmos(N- channel mosfet).
NMOS PLA is a Programmable Logic Array which is designed by employing NMOS technology i.e. by employing nmos transistors to realize the required gates of PLA. PLA is a combination AND gates and OR gates to produced sum of products terms needed for realizing the required combinational logic. It consists of an array of AND gates followed by OR plane. the connections to the AND and OR inputs can be programmed based on our needs.
yes
CMOS and NMOS are two logic families. As the name itself indicates, CMOS is complementary Metal Oxide Semiconductor technology. It uses both PMOS and NMOS transistors for design. Whereas, NMOS logic family uses only NMOS FETs for design.
Transistor is an active device. Active devices (unlike the passive devices such as resistors and capacitors) you have to bias them so that they can function properly. A resistor behaves well no matter what voltage or current you apply to them (it still obeys I=V/R). But a transistor has to be biased at the right voltages in order to operate as what it is supposed to be. For example, in bipolar npn, to have it as signal amplifier (e.g. common emitter), VBE (voltage across Base and Emitter) has to be larger than certain voltage (e.g. 0.7V) and VCE (voltage across collector and emitter) has to be larger than another voltage (e.g. 0.2V). Otherwise, the transistor won't be able to amplify the signals with high gain. In a MOSFET (e.g. NMOS), similarly, we have to bias VGS (gate to source) to be larger than the threshold voltage and VDS (drain to source) to be larger than the saturation voltage. In conclusion, biasing is to use voltage to set the active element at the "right operating region"! The above are just examples. And depends on what you want the transistors to do, you need different "biasing condition". E.g. if you want to make the MOSFET behave like a resistor, you make VDS smaller than the saturation voltage. So, after biasing, how can they be used? Usually, a small voltage (signal) will be coupled to the biased transistors for signal processing.