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The same h parameter model is used for npn and pnp transistors because gain is gain. It does not matter if you are using a negative or a positive system. So long as you are consistent in your calculations, you will get the correct results. In an NPN transistor operating in class A, if you increase the base current by increasing the base voltage, you will increase the collector current which decreases the collector voltage. In a PNP transistor operating in class A, if you increase the base current by decreasing the base voltage, you will still increase the collector current, which will increase the collector voltage.
Current gain is the ratio of output current divided by input current. Voltage gain is the ratio of output voltage divided by input voltage. Nothing more complicated than that.
The current gain in CE mode called as beta (ß) Tha current gain in CB mode called as alpha (A) ß= A/(1-A) =0.98/(1-0.98) =49 the current gain is 49 in CE mode
In a voltage follower, voltage gain is 1, with an offset of VB-E, and current gain is hFe, limited, of course, by the available current in the supply and by the rating of the transistor.
Reason: The common Emitter mode has voltage and current gain better than the other two configurations(CB and CC). i.e it has a current gain greater than that of CC mode and greater voltage gain than that of CB mode.
Current gain configuration is the change in collector current divided by the change in the emitter current. Its symbol is hfe, or h-parameter.
This is a so-called hybrid transistor parameter, also known as beta, representing the forward emitter current gain. This measures how much the base current gets amplified by the device.
The same h parameter model is used for npn and pnp transistors because gain is gain. It does not matter if you are using a negative or a positive system. So long as you are consistent in your calculations, you will get the correct results. In an NPN transistor operating in class A, if you increase the base current by increasing the base voltage, you will increase the collector current which decreases the collector voltage. In a PNP transistor operating in class A, if you increase the base current by decreasing the base voltage, you will still increase the collector current, which will increase the collector voltage.
current gain
FETs don't have current gain as no current flows through the gate. The gain of a FET is a voltage gain and is called mu.
Current gain is the ratio of output current divided by input current. Voltage gain is the ratio of output voltage divided by input voltage. Nothing more complicated than that.
In transistors, current gain plays a significant role. In h parameters, one of the parameters is hfe which is current gain. It is easier if the parameters chosen represent some significant properties of the device. Some other parameters of importance in transistors are input resistance hie and output resistance 1/hoe.So it makes sense to analyse transistors with h parameters.
Bipolar transistor current gain is also called "Beta," or the h-parameter "hfe." beta = current_out / current_in The beta of a BJT is mostly determined by the thickness of the Base region, and by the excess doping in the Emitter relative to the Base. A thin Base and a heavily-doped Emitter leads to a high value for current gain. In a BJT, beta = Ic / Ib In a FET, beta is usually taken as infinity, since no current flows in or out of the gate. Beta is an impirical number. It means nothing unless the Ic is known or the load. It can have a beta from 1000 to 10 it all depends on the load.
cc/ce/cb doesn't give the no current gain
If Beta is infinite, then the current gain will be unity.
The current gain in CE mode called as beta (ß) Tha current gain in CB mode called as alpha (A) ß= A/(1-A) =0.98/(1-0.98) =49 the current gain is 49 in CE mode
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