0
Want this question answered?
Be notified when an answer is posted
Add your answer:
Earn +20 pts
Why emitter is heavily doped and base is lightly dopped working of p-n-p transistor?
Emitter is heavily doped because to provide charge carriers to Base & Collector region, Base and Collectors are lightly doped because to accept those charge carriers.
What is the effect of temperature on hall coefficient of a lightly doped semiconductor?
hall coefficient of a lightly doped semiconductor will decrease with increase in temp as hall coefficient is inversely proportional to number density of charge carriers.
With neat diagram explain the steps involved in the p-well process of CMOS fabrication?
the starting material is either p+ or n+ substrate with a lightly doped epitaxial layer.
Which is used for high speed application bjt igbt mosfet triac?
supposed to be MOSFET. but i also depends on your working freq.
When diode is heavily doped?
base
Why emitter is heavily doped and base is lightly dopped working of p-n-p transistor?
Emitter is heavily doped because to provide charge carriers to Base & Collector region, Base and Collectors are lightly doped because to accept those charge carriers.
Why inner two layers of scr are lightly doped and are wide?
Explain why the innerlayer two layers of an scr are lightly doprd and are
What is the effect of temperature on hall coefficient of a lightly doped semiconductor?
hall coefficient of a lightly doped semiconductor will decrease with increase in temp as hall coefficient is inversely proportional to number density of charge carriers.
What are the differences betweeen e-mosfet and d-mosfet?
An e-mosfet is and "enhancement" mosfet. A d-mosfet is a "depletion" mosfet. These essentially show what mode the mosfet operates in when a voltage is applied to the gate. . An enhancement mode mosfet is normally non-conducting but conducts when the channel is enhanced by applying a voltage to the gate and pulling carriers into the channel. A depletion mode mosfet normally conducts but becomes more and more non-conducting as carriers are depleted or pulled out of the channel by applying a voltage. The polarity of the voltage depends on whether it is an N channel or P channel. P channel uses positively doped silicon while N channel uses negatively doped silicon. N channel fets are used wherever possible because N material conducts better than P material. There are basically two types of fet, the jfet and the mosfet. The jfet uses a single junction to control the channel hence draws some current. Bipolar transistors use two junctions. In the mosfet (Metal Oxide Semiconducting Field Effect Transistor) there is no such junction hence draw so little current for control purposes it can be regarded as zero. The gate is isolated from the channel by a very thin layer of metal oxide (usually chromium dioxide). An enhacement mode mosfet can be turned on by applying a voltage then removing the wire to the gate. The channel will then remain conducting for some time.
Construction of mosfet in depletion region?
To make a depletion MOSFET, the channel must be doped with carriers; this is in total opposite to an enhancement MOSFET which avoids carriers in the channel at all cost. (because the carriers in the channel become the subthreshold leakage current) Since you need to pinch the channel against the substrate to guarantee to turn off the channel completely, there must be a reverse bias between the substrate and the source terminal. As a result, the source terminal of an N type depletion MOSFET must be tied to Vdd. This is also a complete opposite to enhancement MOSFET. In order to turn off the channel quickly, the carriers in the channel of depletion MOSFET are usually planted shallowly. This is a drastically different from enhancement MOSFET that carriers must be planted deeply into source terminal in order to support a large diffuse current. The construction of depletion MOSFET thus requires far less diffusion time than enhancement MOSFET.
Difference between de-mosfets e-mosfets and jfets?
The basic theory of operation is the same, but the device structure is different. With both a MOSFET and a JFET, a conductive channel is established between two terminals (the drain and the source). The structure of the gate terminal makes the difference between the two. In a MOSFET, the metal gate is separated from the channel by an insulator (the O in MOSFET means Oxide, the insulator). In a JFET the gate is a doped region essentially within the conductive channel.
What is a mosfet amplifier?
what is a mosfet amplifier
What are degenerate and non degenerate semiconductors?
Non degenerate semiconductors are those which: -are lightly doped -have less value of electron and hole concentration -violate Pauli's exclusion principle Degenerate semiconductors are those which: -are highly doped -have high value of electron and hole concentration -follow Pauli's exclusion principle
Why mosfet is called mosfet?
MOSFET is an acronym standing for Metal Oxide Semiconductor Field Effect Transistor.
With neat diagram explain the steps involved in the p-well process of CMOS fabrication?
the starting material is either p+ or n+ substrate with a lightly doped epitaxial layer.
Can depletion mosfet act as enhancement mosfet?
It depends. A depletion MOSFET can be used as an ehancemnet MOSFET when it is operated as an analog amplifier. However, a depletion MOSFET can't replace an enhancement MOSFET when it is operated as a digital switch. When a depletion MOSFET is used as a digital switch, since the junction between source terminal and substrate must be reverse biased, the voltage of the source terminal of an N typde transistor must be tied to Vdd, and it is completely opposite to an enhancement MOSFET. When a depletion MOSFET is used as an analog amplifer, the source terminal and the substrate are both at the same potential, just like an enhancement MOSFET.
What are the advantages of mosfet?
mosfet base power inverter of advantages and disaadvantages
