It was simply a matter of availability and ease of processing at the time. Germanium was available and much easier to purify to the ultrapure level needed in semiconductors. It took well over a decade for the technology to progress to the point that silicon could also be purified to the ultrapure level needed in semiconductors. Once silicon could be used it quickly replaced germanium in most applications because it has several physical properties that are better than germanium.
Germanium compounds are toxic.
The element germanium has 32 protons.
The natural state of germanium is a solid (metalloid).
Pure germanium is obtained by distllation of germanium tetrachloride, followed by hydrolysis of GeCl4 to GeO2 and reducing of GeO2 with hydrogen to Ge.
The transistor
William Shockley was born on February 13, 1910.
William Shockley was born on February 13, 1910.
William R. Shockley died on 1945-03-31.
William Shockley died on August 12, 1989 at the age of 79.
William R. Shockley was born on 1918-12-04.
John Shockley's birth name is William John Thomas Shockley.
William Shockley was born on February 13, 1910 and died on August 12, 1989. William Shockley would have been 79 years old at the time of death or 105 years old today.
"William Shockley was born in London, England on February 13, 1910. He was the son of mining engineer, William Hillman Shockley. Unfortunately, at the age of 79 years old, he passed away on August 12, 1989."
august.12,1897
he invented the first transistor
William Shockley created the transistor.
William Bradford Shockley won the Nobel Prize in Physics in 1956 for his co-invention of the transistor. He shared the prize with John Bardeen and Walter Brattain.