Yes it does. Is (sat current) actually increases with an increase in temperature as it is a minority carrier phenomenon. The concentration of minority carriers is dependent on the breaking of the covalent bonds. One way this can happen is through thermal ionization.
(Elec. Engg Semiconductor POV)
The density of reverse osmosis water is approximately 1 gram per milliliter (g/mL) at room temperature. This value may vary slightly depending on the temperature and pressure conditions.
The reverse reaction is endothermic and nonspontaneous.
Condensation
When the temperature is decreased, the reverse reaction (in this case, the decomposition of ammonia into nitrogen and hydrogen) is favored because it is an exothermic reaction. In response to the increased reverse reaction, the forward reaction (formation of ammonia from nitrogen and hydrogen) increases to re-establish equilibrium, ultimately leading to a higher yield of ammonia.
The opposite process of condensation is evaporation. Evaporation occurs when a liquid turns into a gas due to an increase in temperature.
Reverse saturation current of germanium diodeThe current that exists under reverse bias conditions is called the reverse saturation current. Reverse saturation current of the germanium diode is typically 1 micro ampere or 10-6 a.At a fixed temperature, the reverse saturation current of a diode increases with increase in applied reverse bias. In reverse bias region the reverse saturation current also varies with the temperature.
1/T
When a diode is operated as reverse bias the current flow is almost completely blocked. A small amount of current is still able to travel in reverse through the diode and this is referred to as the reverse current saturation.
reverse saturation current is produced by the thermal activity of the diode materials. This current: 1- Is temprature dependant; that is, it increases as temprature. 2- Accounts fot the major portion of diode reverse current surface leakage current is produced by contamination on the surface of the device, allowing current flow to bypass the junction
temparature, collector current, reverse saturation current, beta of atransistor
When a pn junction is reversed bias practically no current flows through it ,but a very small current flows through due to minority charge carriers ,which is known as reverse saturation current .In p type due to electrons and in n type due to holes .
Icbo (collector to base current when emitter is open) also called reverse saturation current as Is in reverse bias p-n junction diode.Regards
In diode some current flows for the presence of the minority charge carriers. This current is known as reverse saturated current. This is generally measured by picoampere. This current is independent of reverse voltage. It only depends on the thermal excitation of the minority carriers
its simple.reverse saturation current is because of the flow of minority carriers across the junction when the bias is changed suddenly from forward to reverse.this is why it doesnt depend on forward bias
doping concentration,temperature are the major source of reverse current
When a pn junction is reversed bias practically no current flows through it ,but a very small current flows through due to minority charge carriers ,which is known as reverse saturation current .In p type due to electrons and in n type due to holes .
Reverse saturation current of silicon is in nano ampear therefore it is prefered over germanium