Yes it does. Is (sat current) actually increases with an increase in temperature as it is a minority carrier phenomenon. The concentration of minority carriers is dependent on the breaking of the covalent bonds. One way this can happen is through thermal ionization.
(Elec. Engg Semiconductor POV)
To reverse boiling, you need to remove energy from the system, i.e. reduce the temperature. Once the steam (gas, vapor) has formed, you can turn it back into liquid by cooling it.
The reverse reaction is endothermic and nonspontaneous.
The reverse reaction is endothermic and spontaneous.
The reverse reaction is exothermic and spontaneous.
Using the tern osmosis means that water will diffuse from higher to lower concentration. Being that reverse osmosis mean a method of purifying water, reverse osmosis leaves the lower concentration to go to the higher concentrated environment to become pure. Did that make sense?
Reverse saturation current of germanium diodeThe current that exists under reverse bias conditions is called the reverse saturation current. Reverse saturation current of the germanium diode is typically 1 micro ampere or 10-6 a.At a fixed temperature, the reverse saturation current of a diode increases with increase in applied reverse bias. In reverse bias region the reverse saturation current also varies with the temperature.
1/T
When a diode is operated as reverse bias the current flow is almost completely blocked. A small amount of current is still able to travel in reverse through the diode and this is referred to as the reverse current saturation.
reverse saturation current is produced by the thermal activity of the diode materials. This current: 1- Is temprature dependant; that is, it increases as temprature. 2- Accounts fot the major portion of diode reverse current surface leakage current is produced by contamination on the surface of the device, allowing current flow to bypass the junction
temparature, collector current, reverse saturation current, beta of atransistor
When a pn junction is reversed bias practically no current flows through it ,but a very small current flows through due to minority charge carriers ,which is known as reverse saturation current .In p type due to electrons and in n type due to holes .
Icbo (collector to base current when emitter is open) also called reverse saturation current as Is in reverse bias p-n junction diode.Regards
its simple.reverse saturation current is because of the flow of minority carriers across the junction when the bias is changed suddenly from forward to reverse.this is why it doesnt depend on forward bias
In diode some current flows for the presence of the minority charge carriers. This current is known as reverse saturated current. This is generally measured by picoampere. This current is independent of reverse voltage. It only depends on the thermal excitation of the minority carriers
When a pn junction is reversed bias practically no current flows through it ,but a very small current flows through due to minority charge carriers ,which is known as reverse saturation current .In p type due to electrons and in n type due to holes .
doping concentration,temperature are the major source of reverse current
Reverse saturation current of silicon is in nano ampear therefore it is prefered over germanium