its simple.reverse saturation current is because of the flow of minority carriers across the junction when the bias is changed suddenly from forward to reverse.this is why it doesnt depend on forward bias
reverse saturation current is produced by the thermal activity of the diode materials. This current: 1- Is temprature dependant; that is, it increases as temprature. 2- Accounts fot the major portion of diode reverse current surface leakage current is produced by contamination on the surface of the device, allowing current flow to bypass the junction
When a pn junction is reversed bias practically no current flows through it ,but a very small current flows through due to minority charge carriers ,which is known as reverse saturation current .In p type due to electrons and in n type due to holes .
When a pn junction is reversed bias practically no current flows through it ,but a very small current flows through due to minority charge carriers ,which is known as reverse saturation current .In p type due to electrons and in n type due to holes .
The temperature dependence of the potential barrier in semiconductor devices, such as diodes, typically leads to a decrease in the barrier height with increasing temperature, due to enhanced carrier excitation. This results in an increase in the reverse saturation current, as more charge carriers can overcome the potential barrier at higher temperatures. Consequently, the reverse saturation current often exhibits an exponential increase with temperature, following the Arrhenius equation, reflecting the heightened thermal energy available to carriers. This behavior is crucial for understanding the performance and reliability of semiconductor devices in varying thermal environments.
The carriers responsible for reverse current flow in a semiconductor device, such as a diode, are typically minority charge carriers. In a p-n junction, for example, electrons (minority carriers in p-type material) and holes (minority carriers in n-type material) contribute to the reverse current when the diode is reverse-biased. This flow occurs due to thermal excitation, allowing these minority carriers to move across the junction and contribute to the reverse saturation current.
Reverse saturation current of germanium diodeThe current that exists under reverse bias conditions is called the reverse saturation current. Reverse saturation current of the germanium diode is typically 1 micro ampere or 10-6 a.At a fixed temperature, the reverse saturation current of a diode increases with increase in applied reverse bias. In reverse bias region the reverse saturation current also varies with the temperature.
When a diode is operated as reverse bias the current flow is almost completely blocked. A small amount of current is still able to travel in reverse through the diode and this is referred to as the reverse current saturation.
reverse saturation current is produced by the thermal activity of the diode materials. This current: 1- Is temprature dependant; that is, it increases as temprature. 2- Accounts fot the major portion of diode reverse current surface leakage current is produced by contamination on the surface of the device, allowing current flow to bypass the junction
temparature, collector current, reverse saturation current, beta of atransistor
1/T
When a pn junction is reversed bias practically no current flows through it ,but a very small current flows through due to minority charge carriers ,which is known as reverse saturation current .In p type due to electrons and in n type due to holes .
Icbo (collector to base current when emitter is open) also called reverse saturation current as Is in reverse bias p-n junction diode.Regards
In diode some current flows for the presence of the minority charge carriers. This current is known as reverse saturated current. This is generally measured by picoampere. This current is independent of reverse voltage. It only depends on the thermal excitation of the minority carriers
The main reason for produce reverse current in a diode is "MINORITY CARRIERS". For reverse bias diode i.e negative terminal connected to p side and positive to n side the electrons in p side(minority charge carriers) attracted towards the positive polarity i.e towards positive terminal. Hence the current (reverse saturation) flows.Holes also contributed the current by attracting towards negative side.
When a pn junction is reversed bias practically no current flows through it ,but a very small current flows through due to minority charge carriers ,which is known as reverse saturation current .In p type due to electrons and in n type due to holes .
Reverse saturation current of silicon is in nano ampear therefore it is prefered over germanium
Yes it does. Is (sat current) actually increases with an increase in temperature as it is a minority carrier phenomenon. The concentration of minority carriers is dependent on the breaking of the covalent bonds. One way this can happen is through thermal ionization. (Elec. Engg Semiconductor POV)