The Hall coefficient of germanium is typically around -0.018 cm³/C. This value indicates the sign and magnitude of the charge carriers in germanium, which are primarily electrons. The negative sign indicates that the charge carriers are negatively charged electrons.
The resistivity of germanium will decrease with increasing temperature due to a positive temperature coefficient of resistivity, while the resistivity of silicon will increase with increasing temperature due to a negative temperature coefficient of resistivity. At room temperature, silicon will have a higher resistivity compared to germanium.
The permeability value of germanium is approximately 1.2 x 10^-5 H/m (henries per meter) at room temperature. This value may vary slightly depending on the purity and crystalline structure of the germanium sample.
The partition coefficient value provides information on how a compound distributes between two immiscible phases, typically between a water phase and an organic phase. A higher partition coefficient value suggests higher solubility of the compound in the organic phase relative to the water phase, indicating greater hydrophobicity and potential difficulty in aqueous solubility. On the other hand, a lower partition coefficient value suggests higher solubility in the aqueous phase relative to the organic phase.
Germanium has 32 electrons.
Germanium Atomic number is 32 and the number of electrons is 32
-(1.907±0.071)*10^-2 m^3/C
The Hall coefficient of germanium typically ranges from 0.003 to 0.006 m^3/C. It is a material property that characterizes the ability of a material to conduct current perpendicular to an applied magnetic field.
The Hall coefficient has the same sign as the charge carrier. The charge carrier in a normal electric current, the electron, is negative, and as a result the Hall coefficient is negative.
physical significance of hall coefficient
hall coefficient of a lightly doped semiconductor will decrease with increase in temp as hall coefficient is inversely proportional to number density of charge carriers.
The resistivity of germanium will decrease with increasing temperature due to a positive temperature coefficient of resistivity, while the resistivity of silicon will increase with increasing temperature due to a negative temperature coefficient of resistivity. At room temperature, silicon will have a higher resistivity compared to germanium.
Some materials with a positive temperature coefficient of resistance include silicon, germanium, and thermistors made of certain metal oxides like manganese, cobalt, and copper. These materials exhibit an increase in resistance with an increase in temperature, making them useful in temperature-sensing applications.
[m^3/C]
The permeability value of germanium is approximately 1.2 x 10^-5 H/m (henries per meter) at room temperature. This value may vary slightly depending on the purity and crystalline structure of the germanium sample.
The numerical value that comes before the variable or, if none, the coefficient is 1.The numerical value that comes before the variable or, if none, the coefficient is 1.The numerical value that comes before the variable or, if none, the coefficient is 1.The numerical value that comes before the variable or, if none, the coefficient is 1.
Germanium has higher electron and hole mobilities compared to silicon, making it more sensitive to small magnetic fields in Hall effect experiments. Additionally, germanium has a lower bandgap energy, which allows for the Hall voltage to be easily measured at room temperature. Silicon, on the other hand, has a higher bandgap energy leading to less sensitivity in detecting small magnetic fields.
A coefficient has a fixed value, unlike a variable in an expression.