Because the bulk charge and surface charge interacting with electric field (forward bias) creates the depletion region.
a transistor in active region when emitter junction is forward biased nd collector junction is reverse biased
When the gate is forward biased, the depletion region is lesser and so the majority carriers(electrons)move freely towards the drain from the source producing high output impedance.When the gate is reverse biased,the depletion region increases(especially near the drain forming wedge shaped depletion)and thus the free flow of the electrons is opposed.hence the output current decreases.The out current becomes zero if the voltage given to the gate is maximum.
To know if a transistor is PNP or an NPN,the following should be verified:For a PNP transistor, the base-collector junction is forward biased while the base-emitter junction is reversed biased.For an NPN transistor, the base-emitter junction is forward biased while the base -collector junction is reversed biased.
For a transistor to be in active region : Base Emitter junction should be forward biased and Emitter collector junction should be reverse biased.
Yes1
a transistor in active region when emitter junction is forward biased nd collector junction is reverse biased
When the gate is forward biased, the depletion region is lesser and so the majority carriers(electrons)move freely towards the drain from the source producing high output impedance.When the gate is reverse biased,the depletion region increases(especially near the drain forming wedge shaped depletion)and thus the free flow of the electrons is opposed.hence the output current decreases.The out current becomes zero if the voltage given to the gate is maximum.
To know if a transistor is PNP or an NPN,the following should be verified:For a PNP transistor, the base-collector junction is forward biased while the base-emitter junction is reversed biased.For an NPN transistor, the base-emitter junction is forward biased while the base -collector junction is reversed biased.
If the EBJ is forward baise and the CBJ is reverse baised then the transistor will in the active/forward mode of operation.
For a transistor to be in active region : Base Emitter junction should be forward biased and Emitter collector junction should be reverse biased.
Yes1
The voltage across a forward-biased PN junction in a semiconductor diode or transistor.
when the diode is applied forward bias voltage the width of depletion region gets reduced the barrier voltage decreases there by facilitating the easy exchange of holes and electrons. when the diode is reverse biased the width of depletion region increases there by hindering the flow or exchange of charge carriers.
Emitter-Base junction should be forward biased.Collector-Base junction should be reverse biased.
A: Actually it is only one transistor required for amplification the other junction can be a diode. As current Begin to flow it causes a bias across one junction which is opposite biasing for the other, A good differential amplifier will have those junction virtually at the same point with a very good current source because any mismatched will cause and output without any input. It is called voltage offset on the other end if the feedback current is very small it will also produce an output voltage offset known as current offset or basically errors
No freaking way but it would make an excellent low level switch if forced at beta of 10
Because the insulation between the gate and the channel is only a reverse biased PN junction. If this junction were to become forward biased the jfet would no longer operate as a transistor at those times.