When the gate is forward biased, the depletion region is lesser and so the majority carriers(electrons)move freely towards the drain from the source producing high output impedance.When the gate is reverse biased,the depletion region increases(especially near the drain forming wedge shaped depletion)and thus the free flow of the electrons is opposed.hence the output current decreases.The out current becomes zero if the voltage given to the gate is maximum.
Its a Transistor used in JFET (Junction Field Effect Transistor)
Junction Field Effect Transistor are classified as hi impedance devices
MOSFET is Metal Oxide Semiconductor Field Effect Transistor. IGFET Insulated Gate Field Effect Transistor. But these expressions are practically synonyms.
The transistor was created by researchers at the university of Geneva. "The first patent for a field-effect transistor principle was filed in Canada... 1925. In 1934 German physicist Dr. Oskar Heil patented another field-effect transistor."
FET stands for field-effect transistor.
Its a Transistor used in JFET (Junction Field Effect Transistor)
The BJT is the bipolar junction transistor, the PCT is the point contact transistor, the UJT is the uni-junction transistor, the SBT is the surface barrier transistor, the FET is the field effect transistor, the GJT is the grown-junction transistor, the AJT is the alloy-junction transistor, and the DFT is the drift field-junction transistor.
Junction Field Effect Transistor are classified as hi impedance devices
BJT is Bipolar junction transistor FET is Field effect Transistor It is a current controlled device It is voltage controlled device
No. The Field Effect Transistor is a different technology than the Bipolar Junction Transistor. That cannot substitute for one another.
An ordinary junction transistor consists of two junctions. In effect a variation of the base to emitter current influences the reverse leakage current at the base to collector junction. The base being common to both junctions. A Field Effect Transistor uses an electric field to narrow the conductive channel thus varying its resistance. A FET has an extremely high input resistance compared with that of a standard junction transistor.
Because the insulation between the gate and the channel is only a reverse biased PN junction. If this junction were to become forward biased the jfet would no longer operate as a transistor at those times.
A Jfet stands for junction field effect transistor. It is a transistor also known for being the simpleist field effect transistor. The basic construction contains has three parts the P-type input the n-type input and a depletion layer.
It can be either a Bipolar Junction Transistor (NPN or PNP) or a Field Effect Transistor (N channel JFET, P channel JFET, N channel MOSFET, or P channel MOSFET).
MOSFET is Metal Oxide Semiconductor Field Effect Transistor. IGFET Insulated Gate Field Effect Transistor. But these expressions are practically synonyms.
It's a junction gate field effect transistor that has it's bandwidth tuned to operate (amplify) in the radio frequency range.
The input of a transistor is typically referred to as the "gate" in a field-effect transistor (FET) or the "base" in a bipolar junction transistor (BJT). In both cases, the input controls the flow of current through the transistor, allowing it to function as a switch or amplifier in electronic circuits. The gate or base receives the input signal that modulates the transistor's operation.