Generally, the depletion region thickness is proportional to thehttp://www.answers.com/topic/square-root of the applied voltage; and http://www.answers.com/topic/capacitanceis inversely proportional to the depletion region thickness. Thus, the capacitance is inversely proportional to the square root of applied voltage.
any capacitance is given by equation C = (epsilon * A/ d) where d is distance between two plates, thus as d reduces C increases. Now, in depletion region as we increase reverse bias, the depletion region width increases. Now consider depletion region as a parallel plate capacitor, with positive charges on n side and negative charges on p side. Thus, as reverse bias increases, d of junction capacitance increases thus capacitance reduces. On other hand, as reverse bias reduces, d of junction capacitance reduces, thus capacitance increases. -Amey Churi
Difference between Schottky Barrier Diode and P-N Junction Diode is as following...Schottky Diode1) Usually using the aluminum metal which is trivalent element. 2) Depletion layer is thinner than the p-n junction diode.3) Forward threshold voltage is smaller than p-n junction diode(0.1V).4) The junction capacitance is lower than p-n junction diode.P-N Junction Diode1) Trivalent impurity is added to the pure silicon structure. 2) Depletion layer is wider than Schottky diode.3) Forward threshold voltage is higher than Schottky diode(0.6V)4) The junction capacitance is higher than Schottky diode.
There is no physical relationship between resistance and capacitive reactance. But if someone tells you that the impedance of something: Z = 3 -4j, the real resistance is 3 and the reactive capacitance is -4.
Capacitance exists between any two conductors, current carrying or not.
Capacitance is an ability to store an electric charge. "If we consider two same conductors as capacitor,the capacitance will be small even the conductors are close together for long time." this effect is called Stray Capacitance.
It includes RF design , parametric amplification ,fm, harmonic generators, voltage controlled oscillators ,in radio ,tv,cellular and wireless receivers ,and in electronic tuning .. That's it. . .
The relationship between resistance and capacitance in a clc circuit is the capacitive reactance given by XC.
The varactor diode is a semiconductor diode but in this kind, the capacitance is supposed to vary according to the applied voltage. It has an exponent factor that bears a negative fraction value.
depletion region acts as dielectric between conducting p-plate and n-plate. Note: junction must be in non-conducting state.
Diffusion capacitance is the capacitance due to transport of charge carriers between two terminals of a device. - Amog This diffusion capacitance is due to depletion capacitance which is a function of forward bias applied to emitter junction of a transistor and due to diffusion capacitance which a function of transconductance of the transistor. Its value is 100 pF. Tirupanyam B.V
any capacitance is given by equation C = (epsilon * A/ d) where d is distance between two plates, thus as d reduces C increases. Now, in depletion region as we increase reverse bias, the depletion region width increases. Now consider depletion region as a parallel plate capacitor, with positive charges on n side and negative charges on p side. Thus, as reverse bias increases, d of junction capacitance increases thus capacitance reduces. On other hand, as reverse bias reduces, d of junction capacitance reduces, thus capacitance increases. -Amey Churi
Transition capacitance : A reverse biased PN-junction has a region of high resistivity (depletion layer) sandwiched in between two regions of relatively low resistivity. The P-N regions act as the plates of a capacitor and the depletion layer acts as the dielectric This is known as the transition capacitance or depletion capacitance. Diffusion capacitance : It is the capacitance due to transport of charge carriers between two terminals of a device like the forward biased PN junction. In a semiconductor device with a current flowing through it (for example, an ongoing transport of charge by diffusion) at a particular moment there is necessarily some charge in the process of transit through the device. If the applied voltage changes to a different value and the current changes to a different value, a different amount of charge will be in transit in the new circumstances. The change in the amount of transiting charge divided by the change in the voltage causing it is the diffusion capacitance. The adjective "diffusion" is used because the original use of this term was for junction http://www.answers.com/topic/diode, where the charge transport was via the diffusion mechanism.
A junction table is added between the two tables involved in the relationship. The primary key from each table is added to the junction table and they are made a joint primary key in that table. Then two one-to-many relationships are set up between the junction table and each of the two other tables.A junction table is added between the two tables involved in the relationship. The primary key from each table is added to the junction table and they are made a joint primary key in that table. Then two one-to-many relationships are set up between the junction table and each of the two other tables.A junction table is added between the two tables involved in the relationship. The primary key from each table is added to the junction table and they are made a joint primary key in that table. Then two one-to-many relationships are set up between the junction table and each of the two other tables.A junction table is added between the two tables involved in the relationship. The primary key from each table is added to the junction table and they are made a joint primary key in that table. Then two one-to-many relationships are set up between the junction table and each of the two other tables.A junction table is added between the two tables involved in the relationship. The primary key from each table is added to the junction table and they are made a joint primary key in that table. Then two one-to-many relationships are set up between the junction table and each of the two other tables.A junction table is added between the two tables involved in the relationship. The primary key from each table is added to the junction table and they are made a joint primary key in that table. Then two one-to-many relationships are set up between the junction table and each of the two other tables.A junction table is added between the two tables involved in the relationship. The primary key from each table is added to the junction table and they are made a joint primary key in that table. Then two one-to-many relationships are set up between the junction table and each of the two other tables.A junction table is added between the two tables involved in the relationship. The primary key from each table is added to the junction table and they are made a joint primary key in that table. Then two one-to-many relationships are set up between the junction table and each of the two other tables.A junction table is added between the two tables involved in the relationship. The primary key from each table is added to the junction table and they are made a joint primary key in that table. Then two one-to-many relationships are set up between the junction table and each of the two other tables.A junction table is added between the two tables involved in the relationship. The primary key from each table is added to the junction table and they are made a joint primary key in that table. Then two one-to-many relationships are set up between the junction table and each of the two other tables.A junction table is added between the two tables involved in the relationship. The primary key from each table is added to the junction table and they are made a joint primary key in that table. Then two one-to-many relationships are set up between the junction table and each of the two other tables.
Difference between Schottky Barrier Diode and P-N Junction Diode is as following...Schottky Diode1) Usually using the aluminum metal which is trivalent element. 2) Depletion layer is thinner than the p-n junction diode.3) Forward threshold voltage is smaller than p-n junction diode(0.1V).4) The junction capacitance is lower than p-n junction diode.P-N Junction Diode1) Trivalent impurity is added to the pure silicon structure. 2) Depletion layer is wider than Schottky diode.3) Forward threshold voltage is higher than Schottky diode(0.6V)4) The junction capacitance is higher than Schottky diode.
A junction table is added between the two tables involved in the relationship. The primary key from each table is added to the junction table and they are made a joint primary key in that table. Then two one-to-many relationships are set up between the junction table and each of the two other tables.
There is no physical relationship between resistance and capacitive reactance. But if someone tells you that the impedance of something: Z = 3 -4j, the real resistance is 3 and the reactive capacitance is -4.
Capacitance in mosfet is of three types: gate capacitance diffusion capacitance routing capacitance Gate capacitance: limits the speed of the device t which it can be operated Diffusion capacitance: It is the capacitance due to charge carriers between drain and source. Routing capacitance: It is the capacitance of the metal which is deposited on the top of oxide layer.