1. Transition capacitance
2. Diffusion capacitance
3. Space charge capacitance
4. Drift capacitance
Diffusion r transtition
collector junction is reverse biased so as to remove the charge carriers away from its junction with the base.
a transistor in active region when emitter junction is forward biased nd collector junction is reverse biased
For a transistor to be in active region : Base Emitter junction should be forward biased and Emitter collector junction should be reverse biased.
Yes1
Because most of the heat buildup occurs in the reverse biased collector-base junction where Ic = Ie + Ib flows.
reverse biased
collector junction is reverse biased so as to remove the charge carriers away from its junction with the base.
a transistor in active region when emitter junction is forward biased nd collector junction is reverse biased
yes
reverse biased PN junction MOS capacitors are more common
cutoff
For a transistor to be in active region : Base Emitter junction should be forward biased and Emitter collector junction should be reverse biased.
the junction is conducting when forward biased, approaching zero resistancethe junction is nonconducting when reverse biased, approaching infinite resistanceneither is exactly zero or infinite
Yes1
If you mean JFET, it is because the gate junction is reverse biased.
If the gate-channel junction of a JFET was not reverse biased the JFET would just act as a forward biased diode across that junction and the gate would cease to have any control over the channel conductance. For the same reason in a MOSFET the substrate-source/channel/drain junction must remain reverse biased. The MOSFET could not act as a MOSFET.
Transistor will be in OFF mode.