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I'd like to know the arguments in favor of AC & DC motors to be used in EV's Art Sestak asestak@roadrunner.com
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What is need of rectifier in electronics?
rectifiers are used in electronics to convert the sine wave into its +ev side only.there are two rectifiers half wave and full wave rectifier half wave take +ev of only one cycle and full wave rectifies whole cycle to its +ve.
What is the energy gap of a semiconductor?
It is in a range of 1eV. (eV=electron volt)
What is intrinsic conductor?
Does not exist.An Intrinsic semiconductor is pure substance where the band gap between the full and empty shells isn't very big (only a few eV)
How much energy does nuclear energy produce?
A heavy nucleus is split by a neutron which can pass the Coloumb barrier because of its lack of electrical charge. Nuclear fission releases energy . During each fission reaction some mass is converted to energy with accordance to E=mc2 The heat energy is usually carried by the fission products. It heats water or another moderator (eg. carbon dioxide) which is then used to heat water to turn it to steam, which drives a turbine which drives a generator which produces electricity because of electromagnetic induction. On average, each fission event releases approx. 200 MeV of energy, while most oxidation reactions (eg. burning fossil fuels) release only few eV per event. 200 MeV = two hundred million eV eV = 1.60217653(14)×10−19 J Nuclear fusion releases energy by binding light nuclei together, rather than separating them. It is vital to notice that only fusion of light nuclei is exothermic (it releases energy), while fusion of heavy nuclei is endothermic (it "consumes" energy). Fusion also releases energy. It is even more energetic than fission, but harder to achieve. It occurs naturally in stars.
Why silicon has potential barrier of 0.7?
The detailed answer would involve quantum physics, with terms such as the Fermi level, the Fermi statistics, and the band gap. In short, a band gap forms in a pure semiconductor crystal lattice, such as that of silicon or gallium arsenide, in a wide temperature range (roughly above the absolute zero and below the melting point of the solid). The bandgap just means that carriers, electrons or holes, cannot occupy energy levels within the bandgap. The bandgap for pure silicon at room temperature is about 1.1eV. In perspective, a particle at room temperature has a thermal energy of 0.026eV, so 1.1 eV is a big chunk of energy that an electron has to acquire to jump the gap. Statistics describes how much of the electron population has the probability of acquiring such energy. Above the forbidden band is called the conduction bands for electrons to roam with or without the aid of an electric field. Below the gap is called the valence band, where holes travel like a vacancy (the lack of an electron). Under the influence of an electric field, holes will have a net drift toward the negative electrode and electrons toward the positive. Introducing impurities into the pure solid will create trap levels within the band gap. That is, impurities always introduce imperfection. These trap levels act like a rest station, allowing electrons to be excited from the valence band to the conduction band (equivalent to holes being excited from the conduction band to the valence band) in two trips instead of one giant leap, from the top of the valence band to the trap, and then from the trap to the bottom of the conduction band. Introducing boron atoms to the silicon solid will create trap levels near the valence band; arsenic or phosphorus atoms will create traps near the conduction band. The introduction of impurities intentionally is called doping. Boron doping is called p-type (p stands for positive) and arsenic or phosphorus doping, n-type (n stands for negative). At room temperature, trap levels at slightly different energy levels in the bangap exist, but p-type doping creates traps near the top of the valence band and n-doping creates traps near the bottom of the conduction band. The Fermi level is the 50% energy level where half of the electron population can ideally be above and half below. The Fermi level is normally located where the trap levels are. At the absolute zero temperature, all electrons will be below the Fermi level, i.e. the valence band; all holes will be in the conduction band. At room temperature, some electrons acquire enough energy to jump the gap to occupy the bottom of the conduction band. Because of the forbidden gap, the levels that an electron can occupy are not always present in the bandgap. Technology has allowed p-doping and n-doping to happen consecutively and in adjacent regions in the silicon solid, to form a pn junction or diode junction. On the p-side, there is an excess of holes. Electrons are in abundancy on the n-side. By the theory of diffusion, excess holes like to diffuse to the n-side and excess electrons to the p-side. Diffusion is evident in real life. For example, human beings treasure a personal space. If everyone stands near the punch bowl at the party, someone will feel uncomfortable and move away from the table. Viola, diffusion ensures. However, nature is such that when too many electrons move to the p-side, the next electrons will have need more and more energy to overcome the repulsion from the electrons that have already migrated. Holes do the same. Eventually (microseconds is a long time in electronics), things will settle down. The phenomenon is called the thermal equilibrium. Equal numbers of electrons are crossing from p to n as from n to p. This reluctance to have more electrons migrating from n to p than from p to n is described as that an energy barrier has formed. This energy barrier is approximately 0.7 eV, which is the origin of the 0.7 V in the question, when converting from energy in [eV] to a voltage in [V] for one electron. The Fermi level plays a role of 0.7 eV here -- the Fermi level on the n-side has to align to the Fermi level on the p-side. Lining up the Fermi level on both p- and n-sides creates the potential barrier. Applying a positive bias to the p-side relative to the n-side will lower the potential barrier, causing a positive current -- electrons flowing from the negative terminal to the positive, while holes do the opposite. Mathematically, this phenomenon can be written as I = Io * [exp(qV/kT) - 1], the diode equation. In this equation, what is important for understanding is that I is the current the diode will conduct for a certain voltage applied, V. V assumes a positive value when the anode is biased more positive than the cathode or the pn junction is forward biased. Conversely, the diode is reverse biased. At room temperature, the term (kT/q) takes on a value of 0.026 V. The value for Io for silicon at room temperature is, let us say, 1E-12 A. Plugging the known values in the diode equation for an increasing V, we get the following pairs of (V,I) values: V [volts] I [amperes] 0 1E-12 0.1 4.58E-11 0.2 2.19E-09 0.3 1.03E-07 0.4 4.80E-06 0.5 2.25E-04 0.6 1.05E-02 0.7 4.93E-01 At a forward bias of 0.7V, the diode is basically a short circuit, meaning the electric field intensity is so high that practically any electrons near the pn junction on the n-side are swept across to the p-side. Recall that holes do the opposite. The potential barrier has been practically overcome/breached.
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What makes a better conductor copper or iron?
Copper is better conductor than iron because copper has higher electron affinity of 1.22948 eV than iron which is 0.16299 eV.
Aspects of cost performance analysis while designing the system?
This greatly depends on the system in question. The cost/performance analysis tells a project manager information about the status of the project in question at a given point of time. The relationship between the Cost Performance Index (CPI), Earned Value (EV), and AC (Actual Cost) can be expressed with the simple equation CPI = EV/AC. The EV consists of work actually completed, while the AC details the real cost of the budget.
What is need of rectifier in electronics?
rectifiers are used in electronics to convert the sine wave into its +ev side only.there are two rectifiers half wave and full wave rectifier half wave take +ev of only one cycle and full wave rectifies whole cycle to its +ve.
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What is a good moveset and EVs for Eevee and its evolutions excluding the Hidden Power move?
A good moveset for Eevee is Last Resort, Shadow Ball, Iron Tail and Take Down. With Eevee, it should be EVed trained in Special Defense, Vaporeon should be EVed trained in HP, Flareon should be EV trained in Attack, Jolteon should be EV trained in Speed, Glaceon should be EV trained in Special Attack, Leafeon should be EV trained in Defense, Espeon should be EV trained in Special Attack and Umbreon should be EVed trained in Special Defense. Umbreon according to some people's opinions is better for Special Defense while Espeon is better for Special Attack while Umbreon has better defensive stats. Espeon is better with offensive stats.
How do you know if you have a small block Chevy 350?
There is a pad, right in front of the drivers side cylinder head. These numbers will tell you ev erything about your motor.
What does EV mean in Pokemon pearl?
EV training in summary is when you spend a litle extra time on your Pokemon for more stats. Each Pokemon has an EV value. Example Geodude has EV value of 1 defense point. Every 4 point of a Ev point when you level u'd get 1 more defense per level. I leveled my Rayquaza a level after EV training and seriously got 34 Special Attack in 1 level. Ofcourse EV has a limit of 125 points (i believe) so you can put those into different stats. On sites there are lists and values of every Pokemon to help. And there are items that boost EV value like Macho Brace and so fourth. And ofcourse the classic Pokerus doubles EV value. Anything unclear or foggy feel free to ask. A site I go to has EV chart and better details. Serebii.net Good luck and enjoy
When did Innsbrucker EV end?
Innsbrucker EV ended in 1994.
