When an n-type semiconductor is further doped with pentavalent atom, four of the atoms are tiedly bond through the process of covalent bond and one electron is weakly bound and free to move as the temperature rises.
An intransic material is a material that have been used in doping process.There are two type of intrinsic material n type and p type.
if the two parts are next to each other, a junction. if not, nothing.
Wafers are formed of highly pure defect-free single crystalline material. Donor impurity atoms, can be added to the molten intrinsic material changing it into n-type or p-type extrinsic semiconductor.
The net charge on n-type and p-type meterials is zero because the r formed by the combination of diferent chemists...
in correct sense it is not the layer but the region around the metallurgical junction which is depleted of charge carriers .in this region an internal electric field exist which counter balance the diffusion of electron and hole around the junction . basically the main reason for the formation of depletion region is the concentration gradient across metallurgical junction of p-n semiconductor.
how can i make p type n type material
An intransic material is a material that have been used in doping process.There are two type of intrinsic material n type and p type.
An N-type material is a type of semiconductor where silicon or germanium is doped with impurities such as phosphorus or arsenic to introduce free electrons into the material. These extra electrons give the material a negative electron charge, hence the "N" designation. N-type materials are commonly used in electronic devices like transistors and diodes.
doping
Diodes.
No. The "n" and "p" does not refer to the negative or positive charge, but to the fact that there are atoms that can easily "donate" electrons (n-type), or atoms that can easily "accept" electrons (p-type).
pentavalent and trivalent atoms
N-type semiconductor started off as a non-conducting material which, having been doped with a pentavalent element, has become a conductor due to an abundance of free electrons that act as charge carriers.
p-type semiconductor is obtained by carrying out a process of doping that is by adding a certain type of atoms to the semiconductor in order to increase the number of the free charge carriers.
N-type semiconductors are a type of extrinsic semiconductor where the dopant atoms (donors) are capable of providing extra conduction electrons to the host material (e.g. phosphorusin silicon). This creates an excess of negative (n-type) electron charge carriers.
first of all un-doped semi-conductor is said to be intrinsic semi-conductor so, there is no discussion of either N-type or P-type
To produce an n-type semiconductor, pure germanium can be doped with an appropriate impurity such as phosphorus or arsenic. These impurities introduce extra electrons into the germanium crystal structure, resulting in an excess of negative charge carriers (electrons) and hence an n-type semiconductor material.