because a semicoductor only alows curent to flow in one direction
The primary difference is that a semiconductor diode is a diode with a p-n junction, and a light-emitting diode is a special case or special type of semiconductor diode that emits light when it is forward biased.
yes
the energy required to break covalent bond in si is 1.1ev and in ge is 0.7ev
Semiconductor diodes are made from the same Silicon, and occasionally Germanium, material that transistors, integrated circuits, etc. are made from. Diodes used in early electronic devices were made from vacuum tubes. Somewhat later diodes were made from finned stacks of Selenium. Simple "Crystal Radios" use Galena (lead ore) crystals with a steel pin that is manipulated to find a spot that allows electrical current to flow in only one direction.
As we bring P type and N type semiconductors fused together, then rich holes in P type would get neutralized with some rich electrons in N type. Hence at the juntion region, there will not be charge carriers ie holes and electrons. So it is known as Depletion Region. Depletion means emptying something. In case of ordinary diode this depletion region would be wider where as in case of Zener Diode the depletion region would be narrower. This is because the semiconductors are heavily doped. Hence potential barrier would be easily built up even with a thin region where holes and electrons get combined for neutrelization.
The first modern semiconductor diode was made with germanium. These diodes were invented in ww2 for RADAR. But before that semiconductor diodes were made with galena (lead sulfide), copper oxide, and selenium. I have no idea which was "first".
The primary difference is that a semiconductor diode is a diode with a p-n junction, and a light-emitting diode is a special case or special type of semiconductor diode that emits light when it is forward biased.
it is made up of semiconductor chip
The breakdown voltage of a diode, such as a Zener diode, can be controlled by adjusting its doping concentration during the manufacturing process. By increasing the doping concentration, the breakdown voltage decreases, and vice versa. This allows for precise control over the voltage at which the diode begins to conduct in the reverse-biased direction. Additionally, the physical size and structure of the diode can also impact its breakdown voltage characteristics.
yes
Zn3As2 is the chemical formula for zinc arsenide, a binary compound made up of zinc and arsenic. It is a semiconductor material with potential applications in electronics and optoelectronics.
A microchip is typically made of silicon, a semiconductor material. The silicon is processed to create transistors, capacitors, and other components that make up the integrated circuits on the chip. These components are then interconnected to perform specific functions.
Computer is made up or designing of the surface of silicon (surface of semiconductor ) "Chip's" made up of various part of CPU
the energy required to break covalent bond in si is 1.1ev and in ge is 0.7ev
The class of materials that make up transistors is "semiconductor." A transistor is often made from very pure silicon that is doped with germanium or other dopant to change its electrical properties.
Semiconductor diodes are made from the same Silicon, and occasionally Germanium, material that transistors, integrated circuits, etc. are made from. Diodes used in early electronic devices were made from vacuum tubes. Somewhat later diodes were made from finned stacks of Selenium. Simple "Crystal Radios" use Galena (lead ore) crystals with a steel pin that is manipulated to find a spot that allows electrical current to flow in only one direction.
A silicon chip is named after the material it is made from, silicon. Silicon is a semiconductor material that is commonly used in electronics due to its ability to conduct electricity. The chip refers to the small piece of silicon that is integrated with electronic circuits to perform various functions.