Well, to the best I can understand (I'm just learning this stuff, so sorry if I'm wrong) It would be a n-type if you doped the Ga, (i.e. replace a Ga atom with a Si atom, as the Si has an extra electron that would be forced to go to the conduction band. If you doped the As with the Si, it would be a p-type as there would be one fewer electron than normal.
Knee voltage, also known as threshold voltage, in Gallium Arsenide (GaAs) refers to the minimum voltage required to initiate significant current flow in a GaAs device, such as a transistor or diode. This voltage is crucial for determining the operational characteristics of GaAs-based electronic components. Typically, knee voltage in GaAs devices is lower compared to silicon counterparts, making GaAs favorable for high-frequency and high-efficiency applications.
Because comparing with ga,as silicon have more attraction force with their outer most electons . The si atomic number is less than all above
base
Emitter is heavily doped because to provide charge carriers to Base & Collector region, Base and Collectors are lightly doped because to accept those charge carriers.
a conductor which doped interncily i.e doped externaly is semiconductor m=1/1-(v/vbd)n m=multipulfactors v=applied revese voltage vbd=break down reverse voltage n= emperical constant n=4 for n-type si n=2 forp-type si
GaAs has high mobility compare to Si
M. Zervos has written: 'Electrical characterisation of modulation doped, GaAs/AlGaAs heterostructures grown by MBE (molecular beam epitaxy)'
Gaas's population is 450.
Gallium Arsenic
No GaAs is a semiconductor- and as such is essentially a covalent compound.
The area of Gaas is 9,130,000.0 square meters.
Gallium Arsenide (GaAs) has a 2.5eV band gap (@ 295 K)
Knee voltage, also known as threshold voltage, in Gallium Arsenide (GaAs) refers to the minimum voltage required to initiate significant current flow in a GaAs device, such as a transistor or diode. This voltage is crucial for determining the operational characteristics of GaAs-based electronic components. Typically, knee voltage in GaAs devices is lower compared to silicon counterparts, making GaAs favorable for high-frequency and high-efficiency applications.
Mark John Smith has written: 'Low temperature phonon-drag thermoelectric power calculations in GaAs/GaAlAs heterojunctions and Si MOSFETs'
ionic
Because comparing with ga,as silicon have more attraction force with their outer most electons . The si atomic number is less than all above
1.7 volts