silicon has a wider bandgap than germenium .silicon jeakage current small, easily available then Ga and break down voltage is more. knee voltage of si is 0.7and Ga is having 0.3then Si is very useful.
Simple, Use the multi-meter , switch to the diode option then connect the positive wire to the positive of diode n negative to the negative ( +ve wire red, -ve wire black) if the there is a reading of =~0.7V then it is silicon. and if it is =~ 0.3V then it is germanium.
Germanium does no "do" anything.
neither, germanium is a semiconductor
It is the middle portion of the transistor
The difference in breakdown voltage between silicon (0.7V) and germanium (0.3V) is mainly due to their different band gap energies. Silicon has a larger band gap compared to germanium, resulting in a higher breakdown voltage. This means that silicon can withstand a higher voltage before breaking down compared to germanium.
A silicon diode has a voltage drop of approximately 0.7V, while a germanium diode has a voltage drop of approximately 0.3V. Though germanium diodes are better in the area of forward voltage drop, silicon diodes are cheaper to produce and have higher breakdown voltages and current capabilities.
The knee voltage for silicon is approximately 0.7V, while for germanium it is around 0.3V. The knee voltage is the voltage at which a diode starts conducting significantly.
The silicon diode (unless its a Schottky diode) conducts at approximately 0.6 volts. The germanium diode, however, conducts at a much lower voltage, typically 0.2 volts. This means that the germanium diode is better at small signal rectification applications, such as AM radio detectors, allowing a smaller tuner tank circuit.
cut in voltage *** for silicon is 0.7volts and that for germanium is 0.3volts.According to Millman and Taub, "Pulse, Digital and Switching Waveforms", McGraw-Hill 1965, the cutin (or offset, break-point or threshold) voltage for a silicon diode is 0.6, and 0.2 for germanium.Breakdown voltage is another thing entirely. It is the reverse voltage at which the junction will break down.
Break down voltages happens at low voltages (.6 for silicon & .3 for germanium), whereas knee voltages at higher voltages. That's why its cheaper.
Silicon is generally preferred over germanium for electronic applications because it has a higher bandgap energy, allowing for the creation of more efficient and faster electronic devices. Silicon is also more readily available and easier to work with in terms of manufacturing processes compared to germanium. Additionally, silicon has better thermal stability and higher breakdown voltage, making it more reliable for long-term applications.
Silicon has a larger band gap energy than germanium, resulting in a higher cut-in voltage for silicon diodes compared to germanium diodes. The larger band gap in silicon means that it requires more energy for electrons to be excited into the conduction band, resulting in a higher cut-in voltage.
In semiconductor uses, such as diodes and transistors, the forward voltage drop for Silicon (Si) is a little less than 0.7 volts, while the FVD for Germanium (Ge) is about 0.3 volts.
It is about 0.7 volt for Silicon diodes.
Silicon = 0.7v : Germanium = 0.3v
A germanium diode has a lower forward voltage drop compared to a silicon diode, typically around 0.3V for germanium and 0.7V for silicon. Germanium diodes also have a higher reverse current leakage compared to silicon diodes.