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Why the breakdown voltage of silicon is 0.7V whereas for germanium it is 0.3V?

The difference in breakdown voltage between silicon (0.7V) and germanium (0.3V) is mainly due to their different band gap energies. Silicon has a larger band gap compared to germanium, resulting in a higher breakdown voltage. This means that silicon can withstand a higher voltage before breaking down compared to germanium.


What is the difference of silicon diode and germanium diode?

A silicon diode has a voltage drop of approximately 0.7V, while a germanium diode has a voltage drop of approximately 0.3V. Though germanium diodes are better in the area of forward voltage drop, silicon diodes are cheaper to produce and have higher breakdown voltages and current capabilities.


What is knee voltage for silicon and germanium?

The knee voltage for silicon is approximately 0.7V, while for germanium it is around 0.3V. The knee voltage is the voltage at which a diode starts conducting significantly.


What is the difference between a silicon diode and a germanium diode?

The silicon diode (unless its a Schottky diode) conducts at approximately 0.6 volts. The germanium diode, however, conducts at a much lower voltage, typically 0.2 volts. This means that the germanium diode is better at small signal rectification applications, such as AM radio detectors, allowing a smaller tuner tank circuit.


What is the cut in voltage of germanium and silicon diodes?

cut in voltage *** for silicon is 0.7volts and that for germanium is 0.3volts.According to Millman and Taub, "Pulse, Digital and Switching Waveforms", McGraw-Hill 1965, the cutin (or offset, break-point or threshold) voltage for a silicon diode is 0.6, and 0.2 for germanium.Breakdown voltage is another thing entirely. It is the reverse voltage at which the junction will break down.


Why the graph of breakdown voltage is cheaper than knee voltage?

Break down voltages happens at low voltages (.6 for silicon & .3 for germanium), whereas knee voltages at higher voltages. That's why its cheaper.


Why is silicon preferred over germanium?

Silicon is generally preferred over germanium for electronic applications because it has a higher bandgap energy, allowing for the creation of more efficient and faster electronic devices. Silicon is also more readily available and easier to work with in terms of manufacturing processes compared to germanium. Additionally, silicon has better thermal stability and higher breakdown voltage, making it more reliable for long-term applications.


Why cut in voltage of silicon is more than that of germanium?

Silicon has a larger band gap energy than germanium, resulting in a higher cut-in voltage for silicon diodes compared to germanium diodes. The larger band gap in silicon means that it requires more energy for electrons to be excited into the conduction band, resulting in a higher cut-in voltage.


What is the threshold voltage of silicon and germanium?

In semiconductor uses, such as diodes and transistors, the forward voltage drop for Silicon (Si) is a little less than 0.7 volts, while the FVD for Germanium (Ge) is about 0.3 volts.


What is the value of the knee voltage and breakdown voltage of z?

It is about 0.7 volt for Silicon diodes.


Which type of diode having knee voltage of 0.7V to 0.3V?

Silicon = 0.7v : Germanium = 0.3v


What parameter in a germanium diode differs from those in a silicon diode?

A germanium diode has a lower forward voltage drop compared to a silicon diode, typically around 0.3V for germanium and 0.7V for silicon. Germanium diodes also have a higher reverse current leakage compared to silicon diodes.