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Forward biase the given diode by using a Variable resistor in the circuit. By adjusting the value of variable resistor you will adjust the voltage being applied to junction diode. First adjust the resistance such that no(negligble) current flows through the circuit. Now start decreasing the value of resistance. Note the voltage across resistor(Vr) when current just starts flowing through the circuit. Then Potential barrier of diode will be: Vb=V-Vr Vb:Barrier Potential V:Battery Voltage Vr:Voltage Drop across resistance when current just starts flowing through the circuit.
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What does SBDT stand for electrically?
SBDT stands for Schottky Barrier Diode Transistor, which is a type of semiconductor device that combines the functions of a Schottky diode and a bipolar transistor in a single package.
What is an equivalent diode of a triode valve?
Hard to answer this one.The triode is a diode with a control electrode (the grid) added.The only useful answer is that a triode is a voltage-controlled doide.Try asking the question so that it can be answered more usefully.
How does the selenium diode work?
Selenium diodes work much like any other diode. They allow current to flow in a forward direction and block current from flowing in the opposite direction. They have a higher forward bias voltage then silicon and as such generate much more heat then a comparable silicon diode. Most selenium diodes will therefore have an integrated heat sink that helps to dissipate all the heat generated. As a zener diode, selenium is used in surge suppression where its heat sink helps in survivability during a surge. However, its low alpha (measure of nonlinearity) means that the voltage during a surge is very high and usually unsuitable to be used as protective device without other components in parallel. The reverse voltage is about 26 Volts, so to get higher voltage zener diode, many are placed in series. By connecting them back to back, then a bidirectionial zener diode can be created. Selenium diode were very common in the 1950s and can be seen in industrial applications of the time. Some model train power supplies were seen to use these components. Since the advent of silicon diodes and their more efficient operation, these part have disappeared from use.
Convert potential energy into light energy?
light bulb. Incandescent: Filament in an environment absent of oxygen, glows white hot when electricity passes through it producing light. Fluorescent: electrode "excites" mercury vapor which produces U.V. rays. U.V. rays hit a phosphorus coating on the inside surface of the bulb. The phosphorus coating adsorbs the U.V. ray and remits it as visible light. Light Emitting Diode or LED : Silicon crystal emits light when electricity passes through the diode in a certain direction. Organic Light Emitting Diode or OLED: Instead of a silicon crystal an organic-compound in used. Note: fire could be considered an answer.
Can a Diode be used on a battery charger?
ya. we are using diode in a battery charger to convert ac into dc. 230v dc is step down by using step down transformer
What is the typical value of the barrier potential for a germanium diode?
The typical value of the barrier potential for a germanium diode is around 0.3 to 0.4 volts. This barrier potential is the voltage required to overcome the potential barrier at the junction of the diode and allow current flow in the forward direction.
Compare the characteristics of a silicon and germanium diode?
Potential barrier of silicon is 0.7, whereas potential barrier of germanium is 0.3
Why can't the potential barrier of a diode be used as a voltage source?
The potential barrier of a diode is caused by the movement of electrons to create holes. The electrons and holes create a potential barrier, but as this voltage will not supply current, it cannot be used as a voltage source.
What is the cut in voltage of germanium and silicon diodes?
cut in voltage *** for silicon is 0.7volts and that for germanium is 0.3volts.According to Millman and Taub, "Pulse, Digital and Switching Waveforms", McGraw-Hill 1965, the cutin (or offset, break-point or threshold) voltage for a silicon diode is 0.6, and 0.2 for germanium.Breakdown voltage is another thing entirely. It is the reverse voltage at which the junction will break down.
Why does a diode not conduct until the cut in voltage is reached?
Cut in voltage is the minimum voltage required to overcome the barrier potential. In other words it is like trying to push a large boulder....it may not be possible to push a large boulder by one person but it may be done if 2 or more people try to push it together depending on the size of the boulder.....similarly....the charge carriers in the barrier region have a potential energy of about 0.6V for Silicon and about 0.2V for Germanium. so in order for the diode to conduct, it is required to overcome the potential of the charge carriers in the junction barrier region and hence only if a potential more than that of the barrier potential (cut off voltage) is applied, then electrons flow past the junction barrier and the diode conducts.
What is the lifetime of barrier voltage in a diode?
The barrier voltage of a diode is 0.7v for silicon and 0.3 for germanium. after this voltage is reached the current starts increasing rapidly... till this voltage is reached the current increases in very small steps...
What happens to the barrier potential when the temperature increases?
When the temperature increases, the barrier potential in a semiconductor diode decreases. This is due to the increase in carrier density at higher temperatures, which results in more charge carriers being available to pass through the barrier. Ultimately, this leads to a lower resistance across the diode and a decrease in the potential barrier.
What is the value of the barrier potential for a germanium diode at different temperatures?
The barrier potential of a germanium diode typically decreases with increasing temperature due to the increase in intrinsic carrier concentration. At room temperature (around 300K), the barrier potential is usually around 0.3-0.4V for a germanium diode.
What is meant by 0.3 volts for germanium and 0.7 volts for silicon?
== When we make a semiconductor junction (a p-n junction), the electric fields force charges to shift creating what is called a depletion region. This depletion region forms a potential barrier across the junction. This potential barrier has a voltage associated with it, and that voltage is 0.3 volts (approximately) for germanium semiconductor material, and 0.7 volts (approximately) for silicon semiconductor. The terms we apply to this barrier potential are the built-in voltage (or potential), junction voltage (or potential), and contact potential. Use the link below to check facts and review some other closely related material.
What parameter in a germanium diode differs from those in a silicon diode?
A germanium diode has a lower forward voltage drop compared to a silicon diode, typically around 0.3V for germanium and 0.7V for silicon. Germanium diodes also have a higher reverse current leakage compared to silicon diodes.
What is a substitute for a germanium diode?
There is no exact substitute for a germanium diode, except another germanium diode. However if the only concern is to get a lower forward voltage drop than that of a silicon diode (0.7V), then a schottky barrier diode may be a suitable replacement as its forward voltage drop (<0.1V) is even lower than that of a germanium diode (0.2V).
What are the Characteristics of a silicon diode?
our raight
