p-type
Oxygen is produced as a by-product while energy carriers, NADPH and ATP, are produced for the next step in the process, the Calvin cycle.
NADP+, ADP, and glucose
Cellular respiration primarily converts energy into ATP during the process of oxidative phosphorylation, which occurs in the mitochondria. This step follows the Krebs cycle, where electron carriers like NADH and FADH2 are produced. These carriers donate electrons to the electron transport chain, creating a proton gradient that drives ATP synthesis through ATP synthase. This process is crucial for efficiently generating ATP, the energy currency of the cell.
Carbon dioxide, water, and energy (in the form of ATP) are produced by the process of respiration.
The majority of the sulfur produced today is obtained from underground deposits, usually found in conjunction with salt deposits, with a process known as the Frasch process.
The majority carrier in p-type semiconductor is the hole. Electron carriers in p-type semiconductor are minority carriers. Minority carriers in any semiconductor are produced mainly by heat. Only at absolute zero temperature would there be no minority carriers.
In semiconductor devices there are two types of charge carriers: electrons and holes. In N-type doped semiconductor the majority charge carriers are electrons and the minority charge carriers are holes. In P-type doped semiconductor the majority charge carriers are holes and the minority charge carriers are electrons.Some kinds of semiconductor devices operate using minority charge carriers in part(s) of their structure. The common bipolar junction transistor is one of these, they are sensitive to a phenomenon called thermal runaway because additional minority carriers are produced as temperature increases. (field effect transistors however operate using only majority carriers and are thus not sensitive to thermal runaway)
In an N-type semiconductor, majority current carriers are electrons, while minority current carriers are holes. In a P-type semiconductor, majority current carriers are holes, while minority current carriers are electrons.
The carriers responsible for reverse current flow in a semiconductor device, such as a diode, are typically minority charge carriers. In a p-n junction, for example, electrons (minority carriers in p-type material) and holes (minority carriers in n-type material) contribute to the reverse current when the diode is reverse-biased. This flow occurs due to thermal excitation, allowing these minority carriers to move across the junction and contribute to the reverse saturation current.
Although a small part of the transistor current is due to the flow of majority carriers, most of the transistor current is due to the flow of minority carriers and so BJTs are classified as 'minority-carrier' devices.
Minority charge carrier injection refers to the process in semiconductor materials where minority carriers (electrons in p-type semiconductors and holes in n-type semiconductors) are introduced into the material. This occurs when a voltage is applied to a junction, causing minority carriers to be injected from one region into another, enhancing conduction and affecting the overall electrical properties of the semiconductor. This phenomenon is crucial in devices like bipolar junction transistors and diodes, where it plays a significant role in their operation and efficiency.
due to minority carriers
Majority carriers in a semiconductor are produced through the doping process, where specific impurities are intentionally added to the pure semiconductor material. For n-type semiconductors, elements with extra electrons (like phosphorus) are added, resulting in excess electrons as majority carriers. For p-type semiconductors, elements with fewer electrons (like boron) create "holes," resulting in holes as majority carriers. This controlled introduction of dopants alters the electrical properties of the semiconductor, facilitating its use in electronic devices.
The p-region of a diode contains an abundance of holes, but also contains a small percentage of electrons. Similarly, the n-region also contains a small percentage of holes. These are knows as the minority carriers. Again, like charges repel, so when the diode is reverse biased, these minority carriers will migrate toward the boundary region. The minority carriers will recombine at the boundary region, and thus enable an electric current. Because these carriers are few in number (orders of magnitude less than the majority carriers), this current is very small. This represents the leakage current of a diode. The mobility of minority carriers increases with temperature, and heating a diode will cause greater numbers of minority carriers to congregate at the boundary region. This will increase leakage current. Surface contamination on the diode may also allow small amounts of electricity to be conducted, again causing leakage.
bipolar devices use both majority and minority current carriersunipolar devices use only majority current carriers
In diode some current flows for the presence of the minority charge carriers. This current is known as reverse saturated current. This is generally measured by picoampere. This current is independent of reverse voltage. It only depends on the thermal excitation of the minority carriers
The P-type semiconductors have a very large percentage of holes.