To forward bias a germanium diode you need to reach between 0.2 and 0.3 V between anode (+) and cathode (-). Once this voltage is reached, the diode will conduct.
Make sure you have a resistor to limit the forward current to a safe (for the diode, that is) value.
A germanium diode has a lower forward voltage drop compared to a silicon diode, typically around 0.3V for germanium and 0.7V for silicon. Germanium diodes also have a higher reverse current leakage compared to silicon diodes.
The silicon diode (unless its a Schottky diode) conducts at approximately 0.6 volts. The germanium diode, however, conducts at a much lower voltage, typically 0.2 volts. This means that the germanium diode is better at small signal rectification applications, such as AM radio detectors, allowing a smaller tuner tank circuit.
A silicon diode has a voltage drop of approximately 0.7V, while a germanium diode has a voltage drop of approximately 0.3V. Though germanium diodes are better in the area of forward voltage drop, silicon diodes are cheaper to produce and have higher breakdown voltages and current capabilities.
The knee voltage for germanium is around 0.2V because this is the point at which the diode starts conducting current in a forward bias condition. Below this voltage, the diode remains non-conductive. This specific value is determined by the band gap energy of germanium.
The typical value of the barrier potential for a germanium diode is around 0.3 to 0.4 volts. This barrier potential is the voltage required to overcome the potential barrier at the junction of the diode and allow current flow in the forward direction.
There is no exact substitute for a germanium diode, except another germanium diode. However if the only concern is to get a lower forward voltage drop than that of a silicon diode (0.7V), then a schottky barrier diode may be a suitable replacement as its forward voltage drop (<0.1V) is even lower than that of a germanium diode (0.2V).
In general O in diodes stands for germanium.since OA79 is a germanium diode O stands for germanium
A germanium diode has a lower forward voltage drop compared to a silicon diode, typically around 0.3V for germanium and 0.7V for silicon. Germanium diodes also have a higher reverse current leakage compared to silicon diodes.
In OA79, the letter A stands for rectifier diode and O stands for Germanium. It acts as a point contact germanium diode and also be replaced with 1N4148 depending on the circuit.
The entire 1N40xx series of power diodes are all silicon. The OA79 small signal diode is germanium.
The silicon diode (unless its a Schottky diode) conducts at approximately 0.6 volts. The germanium diode, however, conducts at a much lower voltage, typically 0.2 volts. This means that the germanium diode is better at small signal rectification applications, such as AM radio detectors, allowing a smaller tuner tank circuit.
A Germanium diode has a much lower breakdown voltage than a silicone diode.
i think to make earth feel better visit my blog for more at http://www.jewelryinworld.blogspot.com OA79 represents Germanium diode. O = germanium, A= rectifier diode.
0a79 ( germanium diode )in glass construction form is used in AM detector circuits.
IN IN = 1N: Refers to the number of junctions (1N= 1 junction). O= Germanium, A= rectifier diode, so OA = germanium rectifier diode.
No. An ordinary diode, be it silicon or germanium, conducts in one direction only, whereas a zener diode conducts in both directions, but at different voltages. An ordinary diode is used to rectify, using its forward bias characteristics, while a zener diode is used to regulate, using its reverse bias characteristics.
Germanium has the ability to operate as a diode, only allowing DC current to flow one way.