In ion implantation, a dimer refers to two atoms that are implanted simultaneously into a target material. This can be beneficial for certain applications where the presence of two atoms together can create specific interactions or properties in the material. Dimer implantation can be used to tailor the material's properties by controlling the concentration and distribution of the two types of atoms.
an ion
An ion is a positively or negatively charged atom or molecule.
The radius of the ion's path in the magnetic field is determined by the ion's charge, speed, and the strength of the magnetic field.
The electric potential energy of an ion is the energy stored in the electric field surrounding the ion due to its charge. It is directly proportional to the ion's charge and the electric potential at the location of the ion. This energy can be calculated using the formula: U = qV, where U is the electric potential energy, q is the charge of the ion, and V is the electric potential at that point.
An Mg2+ ion is a magnesium ion that has a charge of +2, meaning it has lost 2 electrons. The number of neutrons in an Mg2+ ion is the same as in a regular magnesium atom, which is 12 neutrons.
diffusion is high temperature process while ion implantation is low temperature process
Aluminum chloride forms a dimer because each aluminum atom donates one of its lone pair electrons to form a coordinate covalent bond with a chloride ion from another aluminum chloride molecule. This results in the formation of a stable dimer with a bridging chlorine atom between the aluminum atoms.
Ion implantation allows for precise control of dopant concentration and depth, resulting in more uniform doping profiles compared to diffusion processes. It also enables the doping of materials that are difficult to dope by diffusion. Additionally, ion implantation can be performed at lower temperatures, reducing the likelihood of damaging the material being processed.
Ion implantation is necessary in semiconductor manufacturing to precisely introduce dopant atoms into the crystal lattice of a semiconductor material, which helps modify its electrical properties. This process allows for precise control of the dopant concentration and profile, enabling the creation of specific device characteristics such as the conductivity type and doping level. Ion implantation is also used for creating shallow junctions in transistors and optimizing device performance.
Julius Dimer was born in 1871.
Julius Dimer died in 1945.
Monica Slater has written: 'The influence of ion implantation on the oxidation of nickel and stainless steel'
The opposite sequence, so the two strands can bind together to form a dimer.
S. Kostic has written: 'Use of dynamic recoil ion implantation to produce photovoltaic solar cells'
The formula of the usual elemental oxygen molecule is O2, showing two atoms per molecule. (This answer is coded in the phrase "dimer structure" itself, because "dimer" means "two units".)
IgA
A dimer is formed when two small molecules are joined together through chemical bonds. This results in a molecule consisting of two of the same or different subunits.