A Geiger counter, also called a Geiger-Müller counter, is a type of particle detector that measures ionizing radiation. They detect the emission of nuclear radiation: alpha particles, beta particles or gamma rays. A Geiger counter detects radiation by ionization produced in a low-pressure gas in a Geiger-Müller tube
BJT stands for bipolar junction transistor because it is composed of two types of semiconductors (P and N-type) rather than just one type like a unipolar transistor. This allows for both electron and hole current flow in the device, giving it its bipolar characteristic.
Mainly there are two types of transistors. They are BJT (Bipolar Junction Transistors) and FET(Field Effect Transisters). In BJT, there are two types called PNP and NPN. Actually NPN means a BJT transister.
FET's (field effect transistors) are unipolar devices because unlike BJT's that use both electron and hole current, they operate only with one type of charge carrier. BJT is a current-controlled device; that is the base current controls the amount of collector current. FET is a voltage-controlled device, where voltave between two of the terminals (gate and source) controls the current through the device. BJT's have a low input impedance ( ~1k -3k ohms), while FET's have a very high input impedance (~10^11 ohms). Consequently FET's have a lower power consumption. BJT's produce more noise than FET's . FET's have a slower switching speed . BJT's are subject to thermal runway while FET's are immune to this problem. BJT's have a higher cutoff frequencey and a higher maximum current then FET's. FET's are easy to fabricate in large scale and have higher element density the BJT's.
An n-p-n bipolar junction transistor (BJT) configuration is typically used to amplify weak electronic signals. In this configuration, the base region is p-type, sandwiched between two n-type regions (collector and emitter). This setup allows for the amplification of an input signal as it passes through the transistor.
Yes
supposed to be MOSFET. but i also depends on your working freq.
No. A unijunction transistor (UJT) is entirely different in design and application than a bipolar junction transistor (BJT). The UJT works on the principle of voltage modulation of the effective substrate resistance, while the BJT works on the principle of current amplification from one junction to the other, usually base-emitter to collector-emitter.
Disadvantage:Easy to damage when compared to BJT
Bipolar junction transistor(BJT)
ApplicationsThe BJT remains a device that excels in some applications, such as discrete circuit design, due to the very wide selection of BJT types available, and because of its high transconductance and output resistance compared to MOSFETs. The BJT is also the choice for demanding analog circuits, especially for very-high-frequencyapplications, such as radio-frequency circuits for wireless systems. Bipolar transistors can be combined with MOSFETs in an integrated circuit by using a BiCMOSprocess of wafer fabrication to create circuits that take advantage of the application strengths of both types of transistor.
The typical base-emitter gain (beta or hFE) of a CA3046 is 100, at an emitter current of 100ma. This translates to a base-collector gain (alpha) of 0.99.
Three.
They are NPN and PNP. BJT mean bipolar junction transistors. there are two P-N junctions in BJT transisters.
because the fet is made out of carbon metal oxide and the bjt is made out of silicon or germanium
BJT is Bipolar junction transistor FET is Field effect Transistor It is a current controlled device It is voltage controlled device
it is an oscillator