Assuming the non-loyal member survives the suicide mission, yes, you are able to do their loyalty missions afterwards. However if you already failed to get their loyalty on their mission, there is no second chance to get it, even after you complete the main storyline.
For a fixed value of Vbe,as Vce increases the reverse bias on the collector base junction increases,hence the width of the depletion layer increases.therefore base width decreases,so collector current increases. To minimise this effect base must be heavily doped than collector CONSEQUENCES: ->due to early effect collector current increases with increasing Vce,for a fixed value of Vbe. ->the base current do not change significantly Early effect=collector current * correction factor
for a collector to base biased circuit find the stability factor s?what is the effect on s for change in current amplification factor?
the collector voltage is lowered, because the collector is essentially a current source controlled by the base emitor current
the early effect is a width base modulation due to which collector curren inc by inc of c-b voltage
Nope, makes no difference.
As the applied base-collector voltage (VBC) varies, the base-collector depletion region varies in size. This variation causes the gain of the device to change, since the gain is related to the width of the effective base region. This effect is often called the "Early Effect"An NPN bipolar transistor can be considered as two diodes connected anode to anode. In normal operation, the emitter-base junction is forward biased and the base-collector junction is reverse biased. In an npn-type transistor for example, electrons from the emitter wander (or "diffuse") into the base
As the applied base-collector voltage (VBC) varies, the base-collector depletion region varies in size. This variation causes the gain of the device to change, since the gain is related to the width of the effective base region. This effect is often called the "Early Effect"An NPN bipolar transistor can be considered as two diodes connected anode to anode. In normal operation, the emitter-base junction is forward biased and the base-collector junction is reverse biased. In an npn-type transistor for example, electrons from the emitter wander (or "diffuse") into the base
As the applied base-collector voltage (VBC) varies, the base-collector depletion region varies in size. This variation causes the gain of the device to change, since the gain is related to the width of the effective base region. This effect is often called the "Early Effect"An NPN bipolar transistor can be considered as two diodes connected anode to anode. In normal operation, the emitter-base junction is forward biased and the base-collector junction is reverse biased. In an npn-type transistor for example, electrons from the emitter wander (or "diffuse") into the base
the bass word is collect
Flow of current in the collector circuit produces heat at the collector base junction. This increases the temperature. More minority carriers are generated in base collector region, since more bands are broken,the leakage current increases. In other word, leakage current increase when temperature increase.
1st pin is emitter then collector and base
the collector current is directly proportional to the base current