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Difference between Schottky Barrier Diode and P-N Junction Diode is as following...Schottky Diode1) Usually using the aluminum metal which is trivalent element. 2) Depletion layer is thinner than the p-n junction diode.3) Forward threshold voltage is smaller than p-n junction diode(0.1V).4) The junction capacitance is lower than p-n junction diode.P-N Junction Diode1) Trivalent impurity is added to the pure silicon structure. 2) Depletion layer is wider than Schottky diode.3) Forward threshold voltage is higher than Schottky diode(0.6V)4) The junction capacitance is higher than Schottky diode.
The schottky diode is based on a metal-semiconductor junction, called a schottky barrier, that results in lower forward voltage and vastly decreased switching time. While an ordinary silicon diode has a forward voltage around 0.7 volts, with a germanium diode around 0.3 volts, the schottky can be as low as 0.15 volts. The switching time can be in the tens of picoseconds range, compared to hundreds of nanoseconds. The downside is limited reverse voltage rating and poor reverse voltage leakage, which increases with temperature, causing potential thermal runaway.
The schottky diode is based on a metal-semiconductor junction, called a schottky barrier, that results in lower forward voltage and vastly decreased switching time. While an ordinary silicon diode has a forward voltage around 0.7 volts, with a germanium diode around 0.3 volts, the schottky can be as low as 0.15 volts. The switching time can be in the tens of picoseconds range, compared to hundreds of nanoseconds. The downside is limited reverse voltage rating and poor reverse voltage leakage, which increases with temperature, causing potential thermal runaway.
Set analogue multimeter to x 10 k ohm. Place the red probe to the cathode and the black probe to anode and you will get a low ohm reading. Now, reverse the probe and you will get some leakage reading. That leaking reading is what tells you this is a Schottky Barrier Diode.
The potential across a pn junction is called potential barrier because majority charge carriers have to overcome this potential before crossing the junction.
ginago
When a p-n junction is formed then holes and electrons combine near the junction and some portion near the junction neutralizes.Now more electrons and holes cannot combine because of the existence of the neutral layer.They need energy to cross that layer.This raises a resistance between the flow of electrons and holes.This gives rise to the barrier voltage.
The voltage across a forward-biased PN junction in a semiconductor diode or transistor.
when a p-n junction is formed electrons from the neutral N type goes to neutral P type. In the junction there will not be any electron or hole. In the junction because of earning electrons, P side becomes negative(ion) , & N side becomes positive(ion). So there will be a potential deference . This is known as the BARRIER......
depletion layer surrounding the junction where electrons from N side have fallen into holes from P side.
That is a DIODE, which can be of any of these types:P-N junction (shown above)point contactschottky barrier (i.e. metal-semiconductor junction)
tight junction