Crystal diode for a p-type semiconductor and n-type semiconductor formation of the pn junction, in its interface on both sides of a space-charge layer, and has a self-built electric field. When there is no applied voltage, as pn junction on both sides of carrier concentration caused by the proliferation of poor self-built electric current and drift arising from the current equivalent and the balance of power in the state.
When the outside world a positive bias voltage, electric and outside the field of mutual self-suppression role of the Consumers carrier increase from the current spread of the forward current.
When the outside world a reverse bias voltage, external electric field and to further strengthen self-built electric field, in a certain form of reverse voltage and reverse bias voltage value unrelated to reverse saturated current I0.
When the reverse voltage applied to a certain high level, pn junction in the space charge of the electric field strength to achieve the critical values of the double-carrier process, a large amount of electronic hole right, had a great numerical breakdown of the reverse current, Breakdown phenomenon known as diodes.
the energy required to break covalent bond in si is 1.1ev and in ge is 0.7ev
0.6-0.7 V for Si at room temp. and 0.3 for Ge at room temp.
a way of diode modelling in which diode just work as an energy source in the circuit
photo diode donot work for long distance photo diode act as a receiver
A: Actually a transistor have two diode with the base mas a common terminal. the characteristics of these tow diodes however are not the same as a common diode
the energy required to break covalent bond in si is 1.1ev and in ge is 0.7ev
diode does not work on zero bias
silicon diode is preferred more when compared with germanium diode because in silicon diode the operating voltage is 0.7v where as in germanium diode the operating voltage is 0.3v , germanium is temperature sensitive so it can be easily destroyed by increasing temperature hence silicon diode is preferred more
0.6-0.7 V for Si at room temp. and 0.3 for Ge at room temp.
a way of diode modelling in which diode just work as an energy source in the circuit
No a diode will not work when the ignition key is off.
photo diode donot work for long distance photo diode act as a receiver
L.E.D. Stands for Light Emitting Diode so it is a Diode that makes light...
A: Actually a transistor have two diode with the base mas a common terminal. the characteristics of these tow diodes however are not the same as a common diode
Diode is made of P and N type semiconductors having PN junction. The question is meanigless.
The SI unit for work is the joule. The Joule is abbreviated as " J ".
Rd= Vt*c/I Vt=KT/q, K=Boltzmann constant C= constant 2 for si 1 for Ge I current through the diode