answersLogoWhite

0


Best Answer

Thermionic Emission

User Avatar

Wiki User

11y ago
This answer is:
User Avatar

Add your answer:

Earn +20 pts
Q: The principle underlying the creation of a space charge in the x-ray tube is?
Write your answer...
Submit
Still have questions?
magnify glass
imp
Continue Learning about Engineering

Is the amount of space charge created at the cathode is primarily controlled by the tube current?

The cathode space charge is determined by the voltage on the filament.


Why is that a space charge region in a pn junction at equilibrium is often made small?

The space charge region in a pn junction at equilibrium is often made small due to:to obtain a high junction capacitance;since the junction capacitance is inversely proportional to the width of the space charge region, the smaller the width, the larger the junction capacitance.to ensure easy diffusion of charge carriers;if the space charge region is made small, that is, the width is made small, the distance for diffusion also becomes short, then it becomes easy for the electrons to diffuse into the p-side and the holes into the n-side


Government and contractor personnel work side by side on the Beta project in a contractor and work space. Due to the tremendous progress that has been made in the project both the government progr?

The contractor may not charge the time off to the government contract


Explain the basic principle of working of radio?

Radio is the transmission of signals, by modulation of electromagnetic waves with frequencies below those of visible light. Electromagnetic radiation travels by means of oscillating electromagnetic fields that pass through the air and the vacuum of space.


What is meant by transistion and space charge capacitance of a diode?

Diffusion capacitance is the capacitance due to transport of charge carriers between two terminals of a device. - Amog This diffusion capacitance is due to depletion capacitance which is a function of forward bias applied to emitter junction of a transistor and due to diffusion capacitance which a function of transconductance of the transistor. Its value is 100 pF. Tirupanyam B.V