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If it's a silicon zener diode, it conducts in the reverse direction after the rated voltage is reached. Otherwise, it only conducts in the forward bias direction.
cut in voltage *** for silicon is 0.7volts and that for germanium is 0.3volts.According to Millman and Taub, "Pulse, Digital and Switching Waveforms", McGraw-Hill 1965, the cutin (or offset, break-point or threshold) voltage for a silicon diode is 0.6, and 0.2 for germanium.Breakdown voltage is another thing entirely. It is the reverse voltage at which the junction will break down.
A; The 1N4xxx series of rectifier diodes are specified as 1 amp forward conduction. the last number signify the maxi mun reverse voltage it can sustain without breakdown.
The built is voltage would be lower than silicon diode,more leakage or reverse saturation current,poor thermal stability,high noise and greater conduction in comparison to silicon diodes.
The IN5408 diode is an ordinary silicon diode. It has a 3 amp forward current rating, and a 1000 volt peak reverse voltage rating.
It is not 'Cutting voltage' but it is Cut-in voltage'. It is the voltage at which the diode turns ON. For silicon it is 0.7v. After reaching 0.7V diode current starts increasing rapidly for little increase in voltage.
Silicon diodes ARE used in reverse bias. This is the mode in which they do not conduct, which is the principal role of a diode. When forward biased, a silicon diode will conduct but has a voltage drop of around 0.6v so is not useful for rectifying small voltages (unless used as a perfect diode with an op amp).
The main difference between a 1n4004 and a 1n4007 are in the maximum RMS voltage, the maximum DC blocking voltage and the maximum repetitive peak reverse voltage. These are 280 and 700, 400 and 1000, and 400 and 1000 volts respectively.
Peak reverse voltage of a diode is the maximum reverse bias voltage can be applied to diode which does not cause break down.
Both are 1.0 AMP SILICON S general purpose ,Low forward voltage drop. High surge current capabilityRECTIFIER.The only difference is in the maximum repetitive reverse voltage which is 1N4001 has a maximum repetitive reverse voltage of 50 V, 1N4007 is 1000V. Otherwise they are the same. There must be a fault in the circuit which caused the burn-out.
Reverse voltage is voltage is applied in reverse. Instead of the positive voltage going into the anode lead of a component, it goes into the cathode lead of the component.