in forward biasing depletion region width decreases and in reverse biasing it increases .
Because Reverse bias constrained the majority carries to repel from both side (P side & N side)hence Depletion layer is formed with a large extant of majority carriers hence the depletion region is wider in reverse bias.
when the diode is applied forward bias voltage the width of depletion region gets reduced the barrier voltage decreases there by facilitating the easy exchange of holes and electrons. when the diode is reverse biased the width of depletion region increases there by hindering the flow or exchange of charge carriers.
Reverse Bias
a transistor can only work in active region cox in active region collector base junction is in reverse bias and emitter base junction is in forward bias.
Normally,the reverse current is so small that it can be neglected.If the external reverse-bias voltage is increased to a value( 50 V or larger) ,at this stage the reverse breakdown occours
Because Reverse bias constrained the majority carries to repel from both side (P side & N side)hence Depletion layer is formed with a large extant of majority carriers hence the depletion region is wider in reverse bias.
any capacitance is given by equation C = (epsilon * A/ d) where d is distance between two plates, thus as d reduces C increases. Now, in depletion region as we increase reverse bias, the depletion region width increases. Now consider depletion region as a parallel plate capacitor, with positive charges on n side and negative charges on p side. Thus, as reverse bias increases, d of junction capacitance increases thus capacitance reduces. On other hand, as reverse bias reduces, d of junction capacitance reduces, thus capacitance increases. -Amey Churi
depletion region will decrease.
when the diode is applied forward bias voltage the width of depletion region gets reduced the barrier voltage decreases there by facilitating the easy exchange of holes and electrons. when the diode is reverse biased the width of depletion region increases there by hindering the flow or exchange of charge carriers.
Because the bulk charge and surface charge interacting with electric field (forward bias) creates the depletion region.
Reverse Bias
Generally, the depletion region thickness is proportional to thehttp://www.answers.com/topic/square-root of the applied voltage; and http://www.answers.com/topic/capacitanceis inversely proportional to the depletion region thickness. Thus, the capacitance is inversely proportional to the square root of applied voltage.
a transistor can only work in active region cox in active region collector base junction is in reverse bias and emitter base junction is in forward bias.
diode current flows only when the diode is forward biased because in reverse bias the barrier potential increases. Diode can conduct in reverse bias if applied votage is high enough to overcome the reverse bias barrier potential but it can be destructive.
Exactly in forward bias wen internal barrier potential is compensated by external voltage.,
It can be connected in high reverse bias voltage .
when diode is supplied with a voltage higher than RIV in reverse bias, the diode will burn out and will have zero resistance.