reverse saturation current is produced by the thermal activity of the diode materials. This current: 1- Is temprature dependant; that is, it increases as temprature. 2- Accounts fot the major portion of diode reverse current
surface leakage current is produced by contamination on the surface of the device, allowing current flow to bypass the junction
A: They both are the same in essence but for some people like the expression reverse I PREFER SATURATION SINCE THAT WHAT IT IS.
Saturation current come from recombination carrier at 0 V
reverse current that is current that devices generated when voltage biased lower 0V
When a pn junction is reversed bias practically no current flows through it ,but a very small current flows through due to minority charge carriers ,which is known as reverse saturation current .In p type due to electrons and in n type due to holes .
its simple.reverse saturation current is because of the flow of minority carriers across the junction when the bias is changed suddenly from forward to reverse.this is why it doesnt depend on forward bias
When a pn junction is reversed bias practically no current flows through it ,but a very small current flows through due to minority charge carriers ,which is known as reverse saturation current .In p type due to electrons and in n type due to holes .
Different devices have saturation currents. For example transformers and transistors. There is not sufficient information in the question to allow a proper answer.
As reverse voltage is applied to this rectifier it will at some point breakdown whereby massive current can flow in the reverse direction. This current is called saturation current . These rectifiers are very common they start at 50v to 1000v breakdown voltage the last 1n400x 2n400x are the number designated as reverse voltage potential 1n4001 isis the lowest voltage
Reverse saturation current of germanium diodeThe current that exists under reverse bias conditions is called the reverse saturation current. Reverse saturation current of the germanium diode is typically 1 micro ampere or 10-6 a.At a fixed temperature, the reverse saturation current of a diode increases with increase in applied reverse bias. In reverse bias region the reverse saturation current also varies with the temperature.
When a diode is operated as reverse bias the current flow is almost completely blocked. A small amount of current is still able to travel in reverse through the diode and this is referred to as the reverse current saturation.
temparature, collector current, reverse saturation current, beta of atransistor
1/T
When a pn junction is reversed bias practically no current flows through it ,but a very small current flows through due to minority charge carriers ,which is known as reverse saturation current .In p type due to electrons and in n type due to holes .
Icbo (collector to base current when emitter is open) also called reverse saturation current as Is in reverse bias p-n junction diode.Regards
In diode some current flows for the presence of the minority charge carriers. This current is known as reverse saturated current. This is generally measured by picoampere. This current is independent of reverse voltage. It only depends on the thermal excitation of the minority carriers
its simple.reverse saturation current is because of the flow of minority carriers across the junction when the bias is changed suddenly from forward to reverse.this is why it doesnt depend on forward bias
When a pn junction is reversed bias practically no current flows through it ,but a very small current flows through due to minority charge carriers ,which is known as reverse saturation current .In p type due to electrons and in n type due to holes .
Reverse saturation current of silicon is in nano ampear therefore it is prefered over germanium
Different devices have saturation currents. For example transformers and transistors. There is not sufficient information in the question to allow a proper answer.
Saturation region is one in which the output current is independent of the input and remains almost constant. Hence, MOSFETs in saturation are modeled as current sources( whose current is independent of voltage across it)