Gate reverse bias
A Jfet works by applying voltage to the drain of the jfet. A jfet will then conduct across from drain to source.
reverse saturation current is produced by the thermal activity of the diode materials. This current: 1- Is temprature dependant; that is, it increases as temprature. 2- Accounts fot the major portion of diode reverse current surface leakage current is produced by contamination on the surface of the device, allowing current flow to bypass the junction
its simple.reverse saturation current is because of the flow of minority carriers across the junction when the bias is changed suddenly from forward to reverse.this is why it doesnt depend on forward bias
No, jfet works only in depletion mode.
• High Input Impedance Amplifier. • Low-Noise Amplifier. • Differential Amplifier. • Constant Current Source. • Analog Switch or Gate. • Voltage Controlled Resistor. • JFET as a Switch • JFET as a Chopper • JFET as a Current source • JFET as a Amplifier • JFET as a Buffer
BJT is a example for current controll device. And JFET is a voltage controlled device.
Reverse saturation current of germanium diodeThe current that exists under reverse bias conditions is called the reverse saturation current. Reverse saturation current of the germanium diode is typically 1 micro ampere or 10-6 a.At a fixed temperature, the reverse saturation current of a diode increases with increase in applied reverse bias. In reverse bias region the reverse saturation current also varies with the temperature.
Gate reverse bias
Saturation region is one in which the output current is independent of the input and remains almost constant. Hence, MOSFETs in saturation are modeled as current sources( whose current is independent of voltage across it)
A Jfet works by applying voltage to the drain of the jfet. A jfet will then conduct across from drain to source.
When a diode is operated as reverse bias the current flow is almost completely blocked. A small amount of current is still able to travel in reverse through the diode and this is referred to as the reverse current saturation.
FETs don't have current gain as no current flows through the gate. The gain of a FET is a voltage gain and is called mu.
JFET is a unijunction transistor.
reverse saturation current is produced by the thermal activity of the diode materials. This current: 1- Is temprature dependant; that is, it increases as temprature. 2- Accounts fot the major portion of diode reverse current surface leakage current is produced by contamination on the surface of the device, allowing current flow to bypass the junction
JFET = junction field-effect transistor. The transistor design is to restrict/control the current in the channel by expanding or contracting the depletion region, hence the channel cross-section, with a gate signal. The gate is the junction in JFET, compared with using oxide in an MOSFET.
its simple.reverse saturation current is because of the flow of minority carriers across the junction when the bias is changed suddenly from forward to reverse.this is why it doesnt depend on forward bias