For Si it is 0.6or 0.7 and for Ge 0.3 or 0.2.Both values correct for both si and ge
Ge
Mg. I is a non-metal and Si and Ge are metalloids.
Ge has higher conductivity than Si. Because at room temperature the electron and hole mobility for Ge is larger than those of Si. Another explanation is the lower band gap of Ge than Si.
the energy required to break covalent bond in si is 1.1ev and in ge is 0.7ev
for germanium it is 0.3 and for silicon it is 0.7
格雷格(ge lei si )or 格瑞格(ge rui si)
0.6-0.7 V for Si at room temp. and 0.3 for Ge at room temp.
Si ge 32A he yi ge xiang jiao shao nian - 1996 is rated/received certificates of: Hong Kong:IIB
1.Bandgap is comparatively large hence suitable for low & high temp. 2.High melting point of si makes it stable over wide temp. 3.si is more freely available in nature. 4.leakage current less than ge.
Ge and Si are in the same group
Cry-al-ge-si-a.