The significant operational difference between a Si diode and a Ge diode is that Si diodes have a knee voltage of 0.7V needed to allow current flow and Ge diodes have an operational voltage of 0.3V to allow current flow.
for germanium it is 0.3 and for silicon it is 0.7
the energy required to break covalent bond in si is 1.1ev and in ge is 0.7ev
because in Ge mobility of both electrons and holes is higher than the corresponding carriers in Si....and second reason -Ge can be refined and processed more easily..
Ge
In semiconductor uses, such as diodes and transistors, the forward voltage drop for Silicon (Si) is a little less than 0.7 volts, while the FVD for Germanium (Ge) is about 0.3 volts.
for germanium it is 0.3 and for silicon it is 0.7
the energy required to break covalent bond in si is 1.1ev and in ge is 0.7ev
because in Ge mobility of both electrons and holes is higher than the corresponding carriers in Si....and second reason -Ge can be refined and processed more easily..
silicon diodes Cut in voltage is 0.7 V.but the Germanium cut in voltage is 0.3 V that's why .............
Direct band semconductors are mostly for LEDs. Indirect band semiconductors like Si and Ge are conventional diodes.
For Si it is 0.6or 0.7 and for Ge 0.3 or 0.2.Both values correct for both si and ge
Ge
Mg. I is a non-metal and Si and Ge are metalloids.
In semiconductor uses, such as diodes and transistors, the forward voltage drop for Silicon (Si) is a little less than 0.7 volts, while the FVD for Germanium (Ge) is about 0.3 volts.
Ge has higher conductivity than Si. Because at room temperature the electron and hole mobility for Ge is larger than those of Si. Another explanation is the lower band gap of Ge than Si.
格雷格(ge lei si )or 格瑞格(ge rui si)
0.6-0.7 V for Si at room temp. and 0.3 for Ge at room temp.