In electronics, a common-emitter amplifier is one of three basic single-stage bipolar-junction-transistor (BJT) amplifier topologies, typically used as a voltage amplifier.
In this circuit the base terminal of the transistor serves as the input, the collector is the output, and the emitter is common to both (for example, it may be tied to ground reference or a power supply rail), hence its name.
The signal gain of a CE BJT amplifier is hFe or collector resistance divided by emitter resistance, whichever is less.
It should be ~180 degrees out of phase, because a CE amplifier is an inverter. A BJT CE amplifier is a good example to look at. The output is across CE, and at a minimum total output voltage is split across CE and some resistor R. As a higher voltage is applied to the base, the current flow through CE increases as a result of the resistance of CE decreasing. This boils down to a simple voltage divider at the output, Vout = CE / (R + CE). As CE decreases as a result of the input increasing, Vout will decrease.
A: REFERS TO A common emitter amplifier
what is the other name of common emitter amplifier
bias
Gain of ce-cb cascode is nearly equal to the gain of ce amplifier, because in a ce-cb cascode, the gain of the ce stage is equal to 1, and the gain of the cb stage is nearly equal to an isolated ce amplifier. Hence, gain of both are nearly equal. On the other hand, Bandwidth of ce-cb cascode is much higher than the bandwidth of ce amplifier because the cb stage in the cascode configration is not subjected to any Miller effect, thereby improving the high frequency response. The absence of Miller effect is due to the fact that the base of the cb stage is grounded thus, shielding the collector signal from being fed back into the emitter input. To be more clear, the gain of CE stage in cascode is nearly 1, which reduces the miller effect on the cb stage greatly.
Gain in a CE configuration of a BJT is collector resistance divided by emitter resistance, subject to the limit of hFe. The emitter bypass capacitor will have lower impedance at high frequency, so the gain will be higher at higher frequency, making this a high-pass amplifier.
It is the CE (collector - emitter) voltage at a given collector current when the transistor is fully on. Increasing the base current will not lower the CE voltage any more once saturation has been reached.
Both configuration works as amplifire, yet with following charactristics.1. CB configNon inverting amplifierCurrent gain is always less than unityVoltage gain can be high, which is function of output and input impedance.Ic/Ie is always less than unity2. CE config Inverting amplifierTypically used as voltage amplifier since it can have large voltage gainModerate current gain
4.65
GAIN is a function of load current but basically a small current in the base will make a big change of collector current therefore making a transistor a voltage amplifier as opposed to a current amplifier
I dont no exact ans but am thinking this is the ans for that , we can take the o/p for the ce amplifier in two ways one across the collector resistor and other one ofter the coupling capacuitor with respect to the ground.