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Drain-to-source breakdown voltage (BVdss) should not change appreciably until the gate-to-source voltage (Vgs) approaches the device's threshold voltage (Vth). In that case, the drain to source voltage becomes the product of the drain-to-source current (Ids) and the device's on-state resistance (Rds-on) at the given Vgs.

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Q: What is the influence of gate voltage on drain source breakdown voltage in mos transistors?
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