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when the diode is applied forward bias voltage the width of depletion region gets reduced the barrier voltage decreases there by facilitating the easy exchange of holes and electrons. when the diode is reverse biased the width of depletion region increases there by hindering the flow or exchange of charge carriers.
Because Reverse bias constrained the majority carries to repel from both side (P side & N side)hence Depletion layer is formed with a large extant of majority carriers hence the depletion region is wider in reverse bias.
in forward biasing depletion region width decreases and in reverse biasing it increases .
Current flows in a reverse biased diode because diodes are not ideal. They do have leakage current and a breakdown voltage in reverse, just as they have a breakdown current in forward and a non-linear and non-parallel forward voltage to current curve. It is also possible that you are looking at a zener diode. A zener diode is specifically design to conduct at a certain voltage in reverse.
The point in the forward operating region of the characteristic curve where conduction starts to increase rapidly is called Knee voltage of a PN Junction Diode.The breakdown voltage of a diode is the minimum reverse voltage to make the diode conduct in reverse.(or) Breakdown voltage is a parameter of a diode that defines the largest reverse voltage that can be applied without causing an exponential increase in the current in the diode.-- Dinakar
when the diode is applied forward bias voltage the width of depletion region gets reduced the barrier voltage decreases there by facilitating the easy exchange of holes and electrons. when the diode is reverse biased the width of depletion region increases there by hindering the flow or exchange of charge carriers.
Forward bias is when the height of the depletion layer is reduced such that a greater number of majority charge carriers have sufficient energy to overcome the potential barrier while revers bias is when the height of the potential barrier is increased so that very few majority charge carriers have sufficient energy to surmount the potential barrier. All the above phenomena takes place when a potential barrier is applied across the pn junction.
MONTREAL PROTOCOL was the international agreement that helped to reverse ozone depletion.
in forward biasing depletion region width decreases and in reverse biasing it increases .
Because Reverse bias constrained the majority carries to repel from both side (P side & N side)hence Depletion layer is formed with a large extant of majority carriers hence the depletion region is wider in reverse bias.
so that its depletion layer is narrower... when a high reverse voltage is applied across the junction the electron hole generation takes place.....
To slow ozone depletion, CFC's must be curbed. They lead to ozone depletion.
Montreal Protocol is the international agreement formed on 16 September 1987 helped to reverse ozone depletion.
any capacitance is given by equation C = (epsilon * A/ d) where d is distance between two plates, thus as d reduces C increases. Now, in depletion region as we increase reverse bias, the depletion region width increases. Now consider depletion region as a parallel plate capacitor, with positive charges on n side and negative charges on p side. Thus, as reverse bias increases, d of junction capacitance increases thus capacitance reduces. On other hand, as reverse bias reduces, d of junction capacitance reduces, thus capacitance increases. -Amey Churi
on forward biasing width of the depletion layer decreases whereas on reverse biasing the width of depletion layer increases.
Generally, the depletion region thickness is proportional to thehttp://www.answers.com/topic/square-root of the applied voltage; and http://www.answers.com/topic/capacitanceis inversely proportional to the depletion region thickness. Thus, the capacitance is inversely proportional to the square root of applied voltage.
Global warming relates with ozone depletion. The same is true for reverse.