Because Reverse bias constrained the majority carries to repel from both side (P side & N side)hence Depletion layer is formed with a large extant of majority carriers hence the depletion region is wider in reverse bias.
because ur balls are big
in forward biasing depletion region width decreases and in reverse biasing it increases .
depletion region is formed only after recombination of holes and electrons..so in depletion region there are only and only immoble positive and nagative ions...hence,there is no charge carrier..
The threshold voltage will be increased (in case of an N-Mos), because the charge in the depletion region formed under the channel will be more (high density) and hence gate voltage has to overcome this charge for strong inversion. Vt = (work function difference of gate and substrate) + 2*(substrate Fermi voltage) + (Qd/Cox) Where, Qd = charge in Depletion region in Coulomb Cox = Oxide capacitance
0.1 micron
when the diode is applied forward bias voltage the width of depletion region gets reduced the barrier voltage decreases there by facilitating the easy exchange of holes and electrons. when the diode is reverse biased the width of depletion region increases there by hindering the flow or exchange of charge carriers.
increases with doping
Depletion region is the region where current carriers such as electrons and holes are absent.
Base spreading resistance depends on doping of the p-n junction and also the width of depletion region of the p-n junction. Thats what i knw.
Depletion region forms over poles. It is due to cool weather there.
depletion region will decrease.
in forward biasing depletion region width decreases and in reverse biasing it increases .
depletion region formed by either side of p&n junctions mobile charges accumulate in that places.Type your answer here...
depletion region is formed only after recombination of holes and electrons..so in depletion region there are only and only immoble positive and nagative ions...hence,there is no charge carrier..
The atmosphere does not protect the ozone depletion. It is the region where the ozone depletion occurs.
The ozone depletion is highest at the poles. Specially at the Antarctica region.
depletion layer depletion zone juntion region space charge region bipolar transistor field effect transistor variable capacitance diode
depletion region formed by either side of p&n junctions mobile charges accumulate in that places.Type your answer here...