... in CE config.. as Vo=Vcc-Ic Rc nw as Vcc is const. v cn say Vo is directly proportional 2 (const.-Ic Rc) so nw when d base voltage is increased Ib will inc. thus, Ic will inc. cuz Ic=beta Ib thus Ic Rc drop increases... as Vo is prop 2 (const.-Ic Rc) thus, Vo will decrease for inc. in Ic...thus d curve for d +ve half cycle in which Ib is increasing drawn in 180 deg phase showing Vo is dec. n vice versa 4 -ve half cycle...
nw in CC... as d o/p is taken frm emitter... Vo= Ie Re so der's no -ve sign..n for d +ve cycle Ie will incr(dat's leakage current) as der's no-ve sign it'll b in phase wid i/p..hence no phase shift as leakage current doesnt incr. so much thus,d o/p voltage Ie Re doesnt inc much thus, d o/p doesnt amplify much thus dis config knwn as emiter follower...
nw in CB,... d I/P is appiled at emitter n o/p is taken frm collector... so, 4 d +ve half cycle d EB junc will b less FB thus causing dec in Ib n thus, in Ic... so dec in Ic causes inc. in o/p voltage(cuz Vo=const.-Ic Rc)..n during -ve half cycle d junc will b more FB(inc in Ic) so o/p voltage will b decreasing..hence der's no phase shift...
for more info...
cont.
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It should be ~180 degrees out of phase, because a CE amplifier is an inverter. A BJT CE amplifier is a good example to look at. The output is across CE, and at a minimum total output voltage is split across CE and some resistor R. As a higher voltage is applied to the base, the current flow through CE increases as a result of the resistance of CE decreasing. This boils down to a simple voltage divider at the output, Vout = CE / (R + CE). As CE decreases as a result of the input increasing, Vout will decrease.
It is the CE (collector - emitter) voltage at a given collector current when the transistor is fully on. Increasing the base current will not lower the CE voltage any more once saturation has been reached.
a transistor ampify the current i.e. you the output current proportional to the input one. in CE amplifier , this ratio is more than one Ic/Ib = current amplification factor this extra ampitude comes from the biasing batteries used.
Beta is current gain of that transistor,whatever be the input the trasistor. we will get the output multiplied by the beta. for example in CE amplifer if Base current is 10 microampere and beta of that transistor is 100 then collector current would be 1mA i.e. 100 times greater than input current
A silicon transistor is a transistor made of silicon.
In CE transistor volteage divider biasing is used, which is independent of temperature and other parameters.
ce
when the switch the emitter-base junection is an opnd circut and heance the value of input or base curent is zero.
In any transistor circuit , there is a phase shift. It takes a finite time for the controlling signal, usually on the base connection, to have an effect on the circuit and cause a change to the output. The shape of the signal remains but it is shifted in time (phase). The difference varies by configuration. It can be as much as180 degrees if the circuit is inverting the signal. The addition of passive components add to the shift.
I understand that when generating energy 3 Phases energy it is purposely generated at 90º phase lag. If one of the phases fails to lag and catches the other in frequency, the phases become same as one.
I understand that when generating energy 3 Phases energy it is purposely generated at 90º phase lag. If one of the phases fails to lag and catches the other in frequency, the phases become same as one.
Here's a simple one:
Common Emitter(CE) Configuration possess largest voltage gain among the three(CE CB CC).
Single phasing preventor is an electronic circuit which prevents the Thee phase operated Electrical machines from single phase cut off, Phase reversal and phase imbalance.
because that's how God intended the way of the world to be..
180 degree phase shift
because in ce configuration value of input voltage requried to make the transistor on is very less value of the output voltage or output current