Silicon is useful as a base to build electronic components on because it has all the valence electrons it wants (4). A diode is created by placing a an element with an "extra" valence electron near an element that wants an "extra" valence electron.
A crystal detector is a diode, often used in non-powered radio receivers. It conducts at a much lower voltage than a typical silicon diode, making it easier to generate the signal amplitude required from the tuning circuit.
There is no exact substitute for a germanium diode, except another germanium diode. However if the only concern is to get a lower forward voltage drop than that of a silicon diode (0.7V), then a schottky barrier diode may be a suitable replacement as its forward voltage drop (<0.1V) is even lower than that of a germanium diode (0.2V).
The entire 1N40xx series of power diodes are all silicon. The OA79 small signal diode is germanium.
It is not 'Cutting voltage' but it is Cut-in voltage'. It is the voltage at which the diode turns ON. For silicon it is 0.7v. After reaching 0.7V diode current starts increasing rapidly for little increase in voltage.
SILICON same as any other diode but with different characteristics
you can find silicon and germanium materials has 4 valence electrons. This makes them to be useful to make p type and n type materials easily.They are very cheap compare to others.
A crystal detector is a diode, often used in non-powered radio receivers. It conducts at a much lower voltage than a typical silicon diode, making it easier to generate the signal amplitude required from the tuning circuit.
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silicon diode is preferred more when compared with germanium diode because in silicon diode the operating voltage is 0.7v where as in germanium diode the operating voltage is 0.3v , germanium is temperature sensitive so it can be easily destroyed by increasing temperature hence silicon diode is preferred more
There is no exact substitute for a germanium diode, except another germanium diode. However if the only concern is to get a lower forward voltage drop than that of a silicon diode (0.7V), then a schottky barrier diode may be a suitable replacement as its forward voltage drop (<0.1V) is even lower than that of a germanium diode (0.2V).
germenium diode contains majority electron as a charge carriers while the silicon diode contains holes as a majority charge cariers,
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A silicon diode is a tiny electronic component having two terminals, usually a switch or limiting device.
A silicon avalanche photo diode is fabricated by the process called impact ionization.
It's a rectifier diode made simply by combining P type and N type silicon. Where the two are joined, forms a junction that allows conduction in one direction only. A pn junction diode is a diode obtained by by dopping a silicon crystal through the process of covalent bond.
the cut in vol for silicon diode is 0.7 where as germaium is around 0.3 because of their construction( the ratio of majority n minority carreirs)
The built is voltage would be lower than silicon diode,more leakage or reverse saturation current,poor thermal stability,high noise and greater conduction in comparison to silicon diodes.