Due to variation in energy gap between valance band and conduction band....
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∙ 12y agoSilicon has a larger band gap than germanium, leading to a higher barrier potential. This is due to the differences in the electronic structure of these two materials. Silicon's larger band gap means that it requires more energy to move electrons across the junction, resulting in a higher barrier potential compared to germanium.
products made by silicon are more stable than those made by germanium
Germanium has a smaller band gap compared to silicon, allowing it to conduct electricity more effectively. Its crystal structure also has a closer packing arrangement of atoms compared to silicon, making it more metallic in nature. Overall, these factors contribute to germanium exhibiting more metallic properties than silicon.
Silicon has a higher bandgap energy than germanium, which results in a lower intrinsic carrier concentration and reduced leakage current. Additionally, silicon dioxide forms a more stable and protective oxide layer on silicon compared to germanium, further inhibiting current leakage.
Silicon has a higher operating temperature and better thermal stability compared to germanium, making it more reliable for electronic devices. Additionally, silicon's oxide layer forms a better insulating material for integrated circuits, enhancing its performance. Silicon also has a wider bandgap than germanium, allowing for better control of electrical conduction.
Silicon is preferred over germanium because it is more abundant, less costly, and has a higher thermal stability. Silicon also forms a better oxide layer, making it more suitable for integrated circuit applications. Additionally, silicon has better electron mobility and is less susceptible to thermal runaway compared to germanium.
Germanium has a lower barrier potential than silicon due to its lower band gap energy. This results in more thermal noise and higher leakage currents in germanium compared to silicon, making silicon a more suitable material for modern semiconductor devices.
germanium
The barrier potential of a germanium diode typically decreases with increasing temperature due to the increase in intrinsic carrier concentration. At room temperature (around 300K), the barrier potential is usually around 0.3-0.4V for a germanium diode.
products made by silicon are more stable than those made by germanium
Germanium has a smaller band gap compared to silicon, allowing it to conduct electricity more effectively. Its crystal structure also has a closer packing arrangement of atoms compared to silicon, making it more metallic in nature. Overall, these factors contribute to germanium exhibiting more metallic properties than silicon.
The higher leakage current in germanium compared to silicon is mainly due to its lower bandgap energy, which allows more thermally generated carriers to flow through at room temperature. Additionally, germanium has lower electron mobility and higher intrinsic carrier concentration than silicon, contributing to increased leakage current.
The temperature sensitivity of silicon is less than germanium because silicon has a wider energy band gap than germanium. This wider band gap allows silicon to operate more efficiently at higher temperatures, resulting in less temperature-dependent changes in its electrical properties compared to germanium. Additionally, silicon has a higher thermal conductivity than germanium, which helps dissipate heat more effectively, reducing temperature effects on its performance.
Silicon has a higher bandgap energy than germanium, which results in a lower intrinsic carrier concentration and reduced leakage current. Additionally, silicon dioxide forms a more stable and protective oxide layer on silicon compared to germanium, further inhibiting current leakage.
Silicon has a higher operating temperature and better thermal stability compared to germanium, making it more reliable for electronic devices. Additionally, silicon's oxide layer forms a better insulating material for integrated circuits, enhancing its performance. Silicon also has a wider bandgap than germanium, allowing for better control of electrical conduction.
Cut in voltage is the minimum voltage required to overcome the barrier potential. In other words it is like trying to push a large boulder....it may not be possible to push a large boulder by one person but it may be done if 2 or more people try to push it together depending on the size of the boulder.....similarly....the charge carriers in the barrier region have a potential energy of about 0.6V for Silicon and about 0.2V for Germanium. so in order for the diode to conduct, it is required to overcome the potential of the charge carriers in the junction barrier region and hence only if a potential more than that of the barrier potential (cut off voltage) is applied, then electrons flow past the junction barrier and the diode conducts.
Silicon (Si) diodes are more commonly used than germanium (Ge) diodes. Silicon diodes are preferred for most applications due to their higher temperature tolerance, lower leakage current, and greater availability. They are commonly used in rectifiers, signal processing, and various electronic circuits. Germanium diodes, while having some advantages in specific applications (such as lower forward voltage drop), are less common in modern electronics.
Silicon is preferred over germanium because it is more abundant, less costly, and has a higher thermal stability. Silicon also forms a better oxide layer, making it more suitable for integrated circuit applications. Additionally, silicon has better electron mobility and is less susceptible to thermal runaway compared to germanium.