Due to variation in energy gap between valance band and conduction band....
products made by silicon are more stable than those made by germanium
Silicon is a good semi conductor than germanium because silicon is more readily available, cheaper and stable.
Silicon is more semiconductor than Germanium because the characteristics of silicon can be easily modified to obtain either a p-type or n-type material.
Each has four valence electrons, but germanium will at a given temperature have more free electrons and a higher conductivity. Silicon is by far the more widely used semiconductor for electronics, partly because it can be used at much higher temperatures than germanium.
Germanium atoms are hold together through covalent bonds, although they have more metallic character than carbon and silicon.
germanium
Because the space charge region or depletion region is small in germanium compared to silicon hence leakage current is more in germanium than silicon
products made by silicon are more stable than those made by germanium
Silicon is a good semi conductor than germanium because silicon is more readily available, cheaper and stable.
Silicon is more semiconductor than Germanium because the characteristics of silicon can be easily modified to obtain either a p-type or n-type material.
Silicon has 14. Germanium has 32. You figure it out.
Cut in voltage is the minimum voltage required to overcome the barrier potential. In other words it is like trying to push a large boulder....it may not be possible to push a large boulder by one person but it may be done if 2 or more people try to push it together depending on the size of the boulder.....similarly....the charge carriers in the barrier region have a potential energy of about 0.6V for Silicon and about 0.2V for Germanium. so in order for the diode to conduct, it is required to overcome the potential of the charge carriers in the junction barrier region and hence only if a potential more than that of the barrier potential (cut off voltage) is applied, then electrons flow past the junction barrier and the diode conducts.
silicon diode is preferred more when compared with germanium diode because in silicon diode the operating voltage is 0.7v where as in germanium diode the operating voltage is 0.3v , germanium is temperature sensitive so it can be easily destroyed by increasing temperature hence silicon diode is preferred more
Each has four valence electrons, but germanium will at a given temperature have more free electrons and a higher conductivity. Silicon is by far the more widely used semiconductor for electronics, partly because it can be used at much higher temperatures than germanium.
silicon is a compound used to make silicone
about 0.2 V more at higher temps any closer look at the specific diodes spec sheet dopeants vary
Germanium has four number of shells while Silicon has three number of shell. therefore for germanium less energy is required to move the electron from valence band to conduction band if compared to silicon. So at room temperature for germanium their are more number of electrons present in conduction bond hence more number of holes present in the valence energy band. Due to movement of holes reverse saturation current is produced. Their is more number of hole movement in germanium comparatively therefore reverse saturation current is more than silicon for germanium. You may refer to Electronic Devices and Circuits by Allen Mottershead Regards, Zain Ijaz UCTI, Malaysia Mechatronic Engineer.