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'why can't we determine barrier potential by using a voltmeter connected across the ends of a diode'?
The barrier potential is not a voltage created inside the diode. instead, it refers to the depleted zone around the juncture.
Since this region is deplete from carriers (electrons or holes), it became a virtual isolator. In order to make the depleted zone conductive, you need to apply an external voltage to the diode terminals.
If the voltage is in forward bias (+ to the anode and - to the cathode), you will need 0.2/0.3 V for germanium diodes and 0.6/07 V for silicon diodes. You need an external diode to keep the forward current with safe limits.
If the voltage is in reverse mode (- to the anode and + to the cathode), you will need to apply much more voltage to achieve conduction, although this could permanently damage the diode. Zenner diodes, for instance, always work in reverse bias to create a stable voltage, which is used for regulation purposes.
What else can I help you with?
Which is greater the breakdown voltage or the barrier potential?
Breakdown voltage is far greater than barrier potential. silicon:- break-down voltage :- 5v - 450 v barrier potential ;- 0.5v to 0.7 V
When a voltmeter is place across a forward biased diode it will read a voltage?
(A) The bias battery voltage (B) 0V (C) the diode barrier potentiaol (D) The total circuit voltage
How is a potential barrier formed?
when a p-n junction is formed electrons from the neutral N type goes to neutral P type. In the junction there will not be any electron or hole. In the junction because of earning electrons, P side becomes negative(ion) , & N side becomes positive(ion). So there will be a potential deference . This is known as the BARRIER......
What is potential barrier in PN junction?
Whenever two dissimilar conductors touch a "potential barrier" forms. All conductive materials have a voltage above zero that an electron must have to enter the material. In true conductors, this voltage is very low. In semiconductors, it can vary, but is usually in the 0.25 to 6.8 Volt range. In insulators, it can be very, very high. When two semiconductors or a metal and a semiconductor touch the difference is polarity sensitive. The higher the "band gap", the voltage that must be overcome to enter the "conduction band", the higher the voltage drop in the forward bias direction. Think of the "band gap", or potential barrier, as being like a curb on a road and sidewalk. It's easy to ride a bike off the sidewalk over the curb onto the road, but not so easy the other way.
How do you barrier voltage is developed?
The integration of the electric field across the depletion region is what develops the barrier voltage.
Why potential across pn junction is called potential barrier?
The potential across a pn junction is called potential barrier because majority charge carriers have to overcome this potential before crossing the junction.
What is the typical value of the barrier potential for a germanium diode?
The typical value of the barrier potential for a germanium diode is around 0.3 to 0.4 volts. This barrier potential is the voltage required to overcome the potential barrier at the junction of the diode and allow current flow in the forward direction.
Which is greater the breakdown voltage or the barrier potential?
Breakdown voltage is far greater than barrier potential. silicon:- break-down voltage :- 5v - 450 v barrier potential ;- 0.5v to 0.7 V
Why can't the potential barrier of a diode be used as a voltage source?
The potential barrier of a diode is caused by the movement of electrons to create holes. The electrons and holes create a potential barrier, but as this voltage will not supply current, it cannot be used as a voltage source.
Compare the characteristics of a silicon and germanium diode?
Potential barrier of silicon is 0.7, whereas potential barrier of germanium is 0.3
Is barrier potential temperature dependent?
Yes, the barrier potential in a semiconductor diode is temperature dependent. As temperature increases, the barrier potential decreases due to changes in the band gap energy and carrier density, leading to increased leakage current. Conversely, as temperature decreases, the barrier potential increases, reducing the leakage current.
What is the definition of the word barrier spit?
It is almost like a barrier island just connected to the main land!
What happen to barrier potential when temperature increases?
barrier potential P0=(kT/q)*ln(Na*Nd/Ni^2) when T ↑, P0↑.
What happens to the barrier potential when the temperature increases?
When the temperature increases, the barrier potential in a semiconductor diode decreases. This is due to the increase in carrier density at higher temperatures, which results in more charge carriers being available to pass through the barrier. Ultimately, this leads to a lower resistance across the diode and a decrease in the potential barrier.
What are forward and reverse bias?
Forward bias is when the height of the depletion layer is reduced such that a greater number of majority charge carriers have sufficient energy to overcome the potential barrier while revers bias is when the height of the potential barrier is increased so that very few majority charge carriers have sufficient energy to surmount the potential barrier. All the above phenomena takes place when a potential barrier is applied across the pn junction.
What is the potential barrier of germanium?
The potential barrier of germanium is typically around 0.3 to 0.7 electron volts (eV) when used as a semiconductor in electronic devices. This barrier helps control the flow of current in the material and is crucial for its behavior as a semiconductor.
What is the formula for calculating the transmission coefficient of a particle through a finite square well potential barrier?
The formula for calculating the transmission coefficient of a particle through a finite square well potential barrier is given by T e(-2ak), where T is the transmission coefficient, a is the width of the potential barrier, and k is the wave number of the particle.
