electron
When pentavalent impurity is added to pure semiconductor, it is known as N-Type semiconductor. In N-type semiconductor electrons are majority carriers where as holes are minority carriers. impurities such as Arsenic, antimony are added. When trivalent impurity is added to pure semiconductor, it is know as P-type semiconductor. In P-type semiconductor holes are majority carriers whereas electrons are minority carriers. Impurities such as indium, galium are added.
p-type semiconductor A semiconductor that is missing electrons is called an electron hole.
in an undoped semiconductor, the number of carrier available per unit volume for conduction is the intrinsic carrier concentration. These are the loosley bonded outermost electrons of the parent atom which can be freed at room temperature hence both type of carrier (n and p) are equally present in the specimen.
FOR n-type semiconductor the majority charge carrier is electron and for n-type semiconductor it is hole. the majority and minority charge carrier is result of free electron and hole. the majority charge carrier is responsible for transport of electron.
The field-effect transistor (FET) is a transistor that relies on an electric field to control the shape and hence the conductivity of a channel of one type of charge carrier in a semiconductor material. FETs are sometimes called unipolar transistors to contrast their single-carrier-type operation with the dual-carrier-type operation of bipolar (junction) transistors (BJT). The concept of the FET predates the BJT, though it was not physically implemented until after BJTs due to the limitations of semiconductor materials and the relative ease of manufacturing BJTs compared to FETs at the time.
The majority carrier in p-type semiconductor is the hole. Electron carriers in p-type semiconductor are minority carriers. Minority carriers in any semiconductor are produced mainly by heat. Only at absolute zero temperature would there be no minority carriers.
p-type majority carriers are holes n-type majority carriers are electrons
In an N-type semiconductor, majority current carriers are electrons, while minority current carriers are holes. In a P-type semiconductor, majority current carriers are holes, while minority current carriers are electrons.
When pentavalent impurity is added to pure semiconductor, it is known as N-Type semiconductor. In N-type semiconductor electrons are majority carriers where as holes are minority carriers. impurities such as Arsenic, antimony are added. When trivalent impurity is added to pure semiconductor, it is know as P-type semiconductor. In P-type semiconductor holes are majority carriers whereas electrons are minority carriers. Impurities such as indium, galium are added.
Majority charge carriers in the N-type side of a semiconductor material are electrons, because N-type semiconductor is doped with a material with 5 valence electrons. Semiconductor materials have 4 valence electrons and hold tightly to 8, so there is a "loose" electron for every atom of dopant. Therefore most of the charge carriers available are electrons. IE, electrons are the majority charge carriers. Minority charge carriers in N-type semiconductor are holes. Only a few holes (lack of an electron) are created by thermal effects, hence holes are the minority carriers in N-type material. The situation is reversed in P-type semiconductor. A material having only 3 valence electrons is doped into the semiconductor. The semiconductor atoms have 4 valence electrons try to hold tightly to 8, so there is a virtual hole created by a "missing" electron in the valence orbit. This acts as if it were a positive charge carrier. Most of the charge carriers are these holes, therefore in P-type semiconductor holes are the majority charge carrier. Again, reverse situation to minority charge carriers. Some electrons are loosened by thermal effects, they are the minority charge carriers in P-type semiconductor.
The formula to calculate hole density in an N-Type semiconductor is (p = \frac{{n_i^2}}{{n}}), where (p) is the hole density, (n_i) is the intrinsic carrier concentration, and (n) is the electron density. This formula is derived from the law of mass action and represents the equilibrium condition where the product of electron and hole concentrations equals the square of the intrinsic carrier concentration in a semiconductor material.
A semiconductor of silicon doped with a pentavalent impurity expected to be an n-type semiconductor.When you dope a silicon semiconductor with pentavalent impurity the extra electron from the pentavalent compound remains free while others 4 form the covalent bonding with neighboring atoms leaving one unpaired electron.The extra electron remains in the higher energy state nearer to the conduction band, and, depending on the material, a small amount of energy can bring the electron to the conduction band and hence electron acts as the carrier. Thus an n-type of semiconductor is formed.
a pure semiconductors with a valency of three doped with a trivalent element is called p-type and a pure semiconductors with a valency of three doped with a pentavalent element is called n-type
p-type semiconductor A semiconductor that is missing electrons is called an electron hole.
p-type semiconductor A semiconductor that is missing electrons is called an electron hole.
p-type semiconductor A semiconductor that is missing electrons is called an electron hole.
band diagram of p type semiconductor