silicon has several properties that make it preferable to germanium, the main ones being:
Ge has higher conductivity than Si. Because at room temperature the electron and hole mobility for Ge is larger than those of Si. Another explanation is the lower band gap of Ge than Si.
silicon diodes Cut in voltage is 0.7 V.but the Germanium cut in voltage is 0.3 V that's why .............
For Si it is 0.6or 0.7 and for Ge 0.3 or 0.2.Both values correct for both si and ge
Ge and si are not used for Making led's because these two emitts less amount in form of light and larger amount in form of heat.
cut in vge si .6&ge 0.2
Ge has higher conductivity than Si. Because at room temperature the electron and hole mobility for Ge is larger than those of Si. Another explanation is the lower band gap of Ge than Si.
silicon diodes Cut in voltage is 0.7 V.but the Germanium cut in voltage is 0.3 V that's why .............
all metal which have 3 electron in valance band mixed in the pure semiconductor (like Ge,Si) are called p-type impurities
For Si it is 0.6or 0.7 and for Ge 0.3 or 0.2.Both values correct for both si and ge
Ge
Silicon (Si) and germanium (Ge) are primarily used as elemental semiconductors due to their favorable electronic properties and abundant availability. Both materials have a diamond cubic crystal structure, allowing for efficient charge carrier mobility and effective doping, which is essential for semiconductor applications. Silicon, in particular, has a wide bandgap and excellent thermal stability, making it ideal for various electronic devices. Additionally, the well-established manufacturing processes and cost-effectiveness of silicon further contribute to its dominance in the semiconductor industry.
the energy required to break covalent bond in si is 1.1ev and in ge is 0.7ev
for germanium it is 0.3 and for silicon it is 0.7
Ge and Si have a valence shell with 4 electronics making them the starting point for semi-conductors. When mixed with atoms that have 3 or 5 electrons in the valence shell (AKA tri-valent and penta-valent) the blending or doping creates P-type and N-type materials - the building blocks for semi-conductors
In semiconductor uses, such as diodes and transistors, the forward voltage drop for Silicon (Si) is a little less than 0.7 volts, while the FVD for Germanium (Ge) is about 0.3 volts.
格雷格(ge lei si )or 格瑞格(ge rui si)
1.Bandgap is comparatively large hence suitable for low & high temp. 2.High melting point of si makes it stable over wide temp. 3.si is more freely available in nature. 4.leakage current less than ge.