because charge carriers are depleted there, some electrons from n side have fallen into holes on p side reducing/depleting carriers on both sides.
depletion region is formed only after recombination of holes and electrons..so in depletion region there are only and only immoble positive and nagative ions...hence,there is no charge carrier..
depletion region acts as dielectric between conducting p-plate and n-plate. Note: junction must be in non-conducting state.
The potential across a pn junction is called potential barrier because majority charge carriers have to overcome this potential before crossing the junction.
What is the cause of reverse recovery time in a pn junction diode
When the pn junction is forward biased,the height of the potential barrier is reduced allowing more majority charge carriers ti flow across the junction and when it is reversed biased, the height of the potential barrier increases there b reducing the majority charge carrier that have sufficient energy to flow across the junction.
When the pn junction is forward biased, some of the space charge is neutralized reducing the width of the pn junction.
The presence of mobile and bound charges on either sides of the pn junction causes the depletion layer. A pn junction is formed when a semiconductor is dopped with a pentavalent impurity on one side and a tri-valent impurity on the other side.on one side electrons will be more in number and on the other side holes will be more in number.At the junction the electrons combine with holes and there will be no charge carriers(i.e. electrons and holes) in that region.That region which is free from charge carriers is called depletion region.
when the p type semi conductor is connected to n type the electrons in n type migrates towards p type to fill the vacancy i.e holes in p type. As a result accepter ions are developed in n type and donor ions in p type which restrict further movement of electrons and holes . this layer of donor and accepter ions at the pn-junction is called depletion region. and across this region a potential is developed which is called barrier potential.
depletion region is formed only after recombination of holes and electrons..so in depletion region there are only and only immoble positive and nagative ions...hence,there is no charge carrier..
depletion region acts as dielectric between conducting p-plate and n-plate. Note: junction must be in non-conducting state.
The potential across a pn junction is called potential barrier because majority charge carriers have to overcome this potential before crossing the junction.
When a pn junction is direct polarized, the height of the depletion layer is reduced and majority charge carriers now have sufficient energy to cross the junction and when it is revers polarized the height of the depletion layer is increased and the number of majority charge with sufficient energy to cross the junction is cut sharply.
A PN junction is a semiconductor device that acts as a diode, allowing current to flow in one direction while blocking it in the other. It is the basis of many electronic components like diodes, transistors, and solar cells. The junction creates a depletion region that helps control the flow of electric current.
What is the cause of reverse recovery time in a pn junction diode
The depletion region is also called as the space charge region.A p-n junction diode is formed by placing p and n type semiconductor materials in intimate contact on an atomic scale. This may be achieved by diffusing acceptor impurities into an n type silicon crystal or by the opposite sequence.In an open circuit p-n junction diode, majority carriers from either side will diffuse across the junction to the opposite side where they are in minority. These diffusing carriers will leave behind a region of ionized atoms at the immediate vicinity of the metallurgical junction. This region of immobile ionized atoms is called the space charge region.
The quasi-neutral region in a PN junction helps balance the concentration of charge carriers (electrons and holes) on both sides of the junction. This region allows for the flow of current by providing a pathway for the charge carriers to move across the junction. It contributes to the overall behavior of the junction by facilitating the formation of an electric field that helps regulate the flow of current through the junction.
because that the tunnel diode is a standard pn junction diode in many respect except its highly doped pn junction so it has some characteristics in the negative resistance region another that its a standard diode