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What is the difference between junction capacitance and diffusion capacitance?
Junction capacitance occurs at the depletion region of a p-n junction diode and is associated with the charge storage due to the electric field created by the built-in potential; it varies with the applied voltage. In contrast, diffusion capacitance is related to the charge carriers' movement across the junction when the diode is forward-biased, and it reflects the transient response of the charge carriers as they diffuse into the depletion region. Essentially, junction capacitance is linked to the static electric field, while diffusion capacitance is dynamic, arising from the flow of charge carriers.
Why potential across pn junction is called potential barrier?
The potential across a pn junction is called potential barrier because majority charge carriers have to overcome this potential before crossing the junction.
Why depletion region in pn junction is called depletion region?
because charge carriers are depleted there, some electrons from n side have fallen into holes on p side reducing/depleting carriers on both sides.
Why the depletion layer becomes very thick when then pn junction diode is lightly doped?
When the pn junction is forward biased,the height of the potential barrier is reduced allowing more majority charge carriers ti flow across the junction and when it is reversed biased, the height of the potential barrier increases there b reducing the majority charge carrier that have sufficient energy to flow across the junction.
What is the depletion layer in a semi conductor?
in correct sense it is not the layer but the region around the metallurgical junction which is depleted of charge carriers .in this region an internal electric field exist which counter balance the diffusion of electron and hole around the junction . basically the main reason for the formation of depletion region is the concentration gradient across metallurgical junction of p-n semiconductor.
How do you control PN-junction?
When a pn junction is direct polarized, the height of the depletion layer is reduced and majority charge carriers now have sufficient energy to cross the junction and when it is revers polarized the height of the depletion layer is increased and the number of majority charge with sufficient energy to cross the junction is cut sharply.
What is the difference between junction capacitance and diffusion capacitance?
Junction capacitance occurs at the depletion region of a p-n junction diode and is associated with the charge storage due to the electric field created by the built-in potential; it varies with the applied voltage. In contrast, diffusion capacitance is related to the charge carriers' movement across the junction when the diode is forward-biased, and it reflects the transient response of the charge carriers as they diffuse into the depletion region. Essentially, junction capacitance is linked to the static electric field, while diffusion capacitance is dynamic, arising from the flow of charge carriers.
What causes depletion region across P-N junction?
The presence of mobile and bound charges on either sides of the pn junction causes the depletion layer. A pn junction is formed when a semiconductor is dopped with a pentavalent impurity on one side and a tri-valent impurity on the other side.on one side electrons will be more in number and on the other side holes will be more in number.At the junction the electrons combine with holes and there will be no charge carriers(i.e. electrons and holes) in that region.That region which is free from charge carriers is called depletion region.
Why potential across pn junction is called potential barrier?
The potential across a pn junction is called potential barrier because majority charge carriers have to overcome this potential before crossing the junction.
Why depletion region in pn junction is called depletion region?
because charge carriers are depleted there, some electrons from n side have fallen into holes on p side reducing/depleting carriers on both sides.
Why the depletion layer becomes very thick when then pn junction diode is lightly doped?
When the pn junction is forward biased,the height of the potential barrier is reduced allowing more majority charge carriers ti flow across the junction and when it is reversed biased, the height of the potential barrier increases there b reducing the majority charge carrier that have sufficient energy to flow across the junction.
What is the depletion layer in a semi conductor?
in correct sense it is not the layer but the region around the metallurgical junction which is depleted of charge carriers .in this region an internal electric field exist which counter balance the diffusion of electron and hole around the junction . basically the main reason for the formation of depletion region is the concentration gradient across metallurgical junction of p-n semiconductor.
What Depletion region will form?
A depletion region will form at the junction of a p-type and n-type semiconductor in a semiconductor diode. This region is depleted of charge carriers, creating an electric field that prevents further flow of current in the reverse bias direction.
Why depletion layer width at the collector junction are more than the depletion layer width at the emitter junction?
The depletion layer width at the collector junction is typically wider than that at the emitter junction due to the differences in doping concentrations. The collector region is generally lightly doped compared to the heavily doped emitter region, resulting in a larger electric field and a broader depletion region. Additionally, the collector junction must accommodate a higher reverse bias, which further expands the depletion region to maintain charge neutrality and facilitate efficient charge separation.
What are the regions of a P-N junction?
A P-N junction consists of two regions: the P-type region and the N-type region. The P-type region is doped with elements that create an abundance of holes (positive charge carriers), while the N-type region is doped with elements that provide excess electrons (negative charge carriers). When these two regions are joined, a depletion region forms at the junction where electrons and holes recombine, creating an electric field that allows for diode behavior. This junction is essential in semiconductor devices for controlling current flow.
What is depletion region in a diode?
As we bring P type and N type semiconductors fused together, then rich holes in P type would get neutralized with some rich electrons in N type. Hence at the juntion region, there will not be charge carriers ie holes and electrons. So it is known as Depletion Region. Depletion means emptying something. In case of ordinary diode this depletion region would be wider where as in case of Zener Diode the depletion region would be narrower. This is because the semiconductors are heavily doped. Hence potential barrier would be easily built up even with a thin region where holes and electrons get combined for neutrelization.
What is space charge region in pn junction?
The depletion region is also called as the space charge region.A p-n junction diode is formed by placing p and n type semiconductor materials in intimate contact on an atomic scale. This may be achieved by diffusing acceptor impurities into an n type silicon crystal or by the opposite sequence.In an open circuit p-n junction diode, majority carriers from either side will diffuse across the junction to the opposite side where they are in minority. These diffusing carriers will leave behind a region of ionized atoms at the immediate vicinity of the metallurgical junction. This region of immobile ionized atoms is called the space charge region.
