direct band gap means in e-k diagram valance bands are exactly below covalance band,in this band electron falls from the conduction band to valance band directly without going to metastable state and in indirect band gap the band electron falls from the conduction band to valance band by first going through the metastable state
fiojflks jbhv;rwoi jleo hijer oewohir kjld pjfhoc j ld hpldvs hvddpkkvl njldjdlc ijpl
nvlkd
mkjsfd; lmv;skjf
jpedf['k
dvdkjpik vkkv kvokser ipokvf vpv pe
jre
kopr
what is indirect band gap semiconductor?
Yes it is. Most Sn (tin) materials as semiconductors are direct band gap materials. Silicon on the other hand is an indirect band gap material.
The indirect band gap semiconductors like silicon and germanium are mostly used because they are elemental, plentiful, and easier to process than the direct band gap semiconductors which are alloys or compounds.
I agree with Binitha on the point that Silicon is an indirect band gap semiconductor.
Amorphous Silicon (a-Si) has band gap of about 1.7eV, whereas crystalline (c-Si) only has a band gap of 1.1eV
Fairly certain Beryllium Oxide is an extrinsic semiconductor with band gap 10.6 eV. Otherwise the answer is Boron Nitride (6.36 eV)
It is direct band gap material.
Yes it is. Most Sn (tin) materials as semiconductors are direct band gap materials. Silicon on the other hand is an indirect band gap material.
In a direct band gap the electron only needs energy to jump to the conduction band. In an indirect band an electron needs energy and momentum to jump to the conduction band
Direct band semconductors are mostly for LEDs. Indirect band semiconductors like Si and Ge are conventional diodes.
Silicon is by all means an indirect band gap material.
Silicon is an indirect band gap semiconductor
GaP in an indirect band gap material
The indirect band gap semiconductors like silicon and germanium are mostly used because they are elemental, plentiful, and easier to process than the direct band gap semiconductors which are alloys or compounds.
Optical sources like LEDs use direct band gap so that conduction band electorn can recombine directly with a hole in valence band .
The band gap represents the minimum energy difference between the top of the valence band and the bottom of the conduction band, However, the top of the valence band and the bottom of the conduction band are not generally at the same value of the electron momentum. In a direct band gap semiconductor, the top of the valence band and the bottom of the conduction band occur at the same value of momentum.In an indirect band gap semiconductor, the maximum energy of the valence band occurs at a different value of momentum to the minimum in the conduction band energy
I think because GaAs has a direct band gap transition but Si and Ge has indirect band gap transition. Both silicon and germanium are opaque and thus cannot be used to make LASERs.
Yes it is.