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h-parameter used to find the input and output impedence of the two port network. suppose if u connect a high load at the output port then u should take care that no current from the device will attack the network, to determine that we should know what is the impedance of the circuit.
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What jobs can a transistor do when combined with the CPU?
The modern CPU (typically inside a microprocessor IC) is built of billions of transistors (typically complementary MOSFETs). The CPUs of the late 1960s were built of tens of thousands to hundreds of thousands of transistors inside several hundred MSI ICs (typical silicon NPN BJTs). The CPUs of the late 1950s to early 1960s were built of thousands to tens of thousands of discrete transistors (typically germanium BJTs, gradually transitioning silicon BJTs). The CPUs of the early 1950s did not use transistors, they were built of hundreds to tens of thousands of vacuum tubes.
What are the main differences between FETs and BJTs in terms of voltage gain?
Bipolar Junction Transistorscurrent controlleduse both holes and electrons as carriershave three terminals called the emitter, base, and collectoronly available in one mode of operationField-Effect Transistorsvoltage controlled (like vacuum tubes)use either holes or electrons as carriers, not bothhave three or four terminals called the source, gate, drain and sometimes substrateavailable in either enhancement mode or depletion mode of operation
What is difference between bjt and scr?
BJT is nothing but the addition of two PN junction diodes. There are two types of BJT= P-N-P or N-P-N P-N N-P + or + N-P = P-N-P P-N =N-P-N SCR is a thyristor which is made adding two BJTs. Of course they are made of sillicon. Exempli gratia: P-N-P + + N-P-N = P-N-P-N comparison between scr bjt and mosfet Check the related link for further information.
What are the uses of BJT?
Bipolar junction transistors has two junctions base emitter junction, base collector junction. Accordingly there are four different regions of operation in which either of the two junctions are forward biased reverse biased or both. But the BJT can be effectively operated in there different modes according to the external bias voltage applied at each junction. i.e. Transistor in active region, saturation and cutoff. The other region of operation of BJT is called as inverse active region.
Difference between de mosfet and e mosfet?
The basic difference is between JFET and enhanced MOSFET,although the construction of JFET and depletion MOSFET is different but their most of the characteridtics are same,i.e shockly equation can be applied on both of them,but in JFET we cant give to gate voltage, the +ve value,because it does not works, but in depletion we can give,but some limited +ve value. Now enhanced MOSFET is different,shockly equation cant be applied.The transfer characteristics are purely in +ve Vg region. i.e for E-MOSFET Vg should be > 0,for its proper function.
What are the main differences between FETs and BJTs in terms of input impedance?
FET has very high input impedanceBJT has very low input impedance
What jobs can a transistor do when combined with the CPU?
The modern CPU (typically inside a microprocessor IC) is built of billions of transistors (typically complementary MOSFETs). The CPUs of the late 1960s were built of tens of thousands to hundreds of thousands of transistors inside several hundred MSI ICs (typical silicon NPN BJTs). The CPUs of the late 1950s to early 1960s were built of thousands to tens of thousands of discrete transistors (typically germanium BJTs, gradually transitioning silicon BJTs). The CPUs of the early 1950s did not use transistors, they were built of hundreds to tens of thousands of vacuum tubes.
Is the collector current dependent on colllector- emitter voltage in BJTs?
No. For BJTs, they have a natural amplification, B, of current between the base current to collector current. In rough calculations, I've often used 50. So applying 20uA of current to the base of a BJT should cause 1mA of current to flow through the collector (assuming base, collector, and emitter resistors are sized appropriately so this is not limitted). The emitter will see the base current + the collector current.
Why bjt is a minority carrier device?
Although a small part of the transistor current is due to the flow of majority carriers, most of the transistor current is due to the flow of minority carriers and so BJTs are classified as 'minority-carrier' devices.
Difeerence between n-channel and p-channel fet?
The field-effect transistor (FET) is a transistor that relies on an electric field to control the shape and hence the conductivity of a channel of one type of charge carrier in a semiconductor material. FETs are sometimes called unipolar transistors to contrast their single-carrier-type operation with the dual-carrier-type operation of bipolar (junction) transistors (BJT). The concept of the FET predates the BJT, though it was not physically implemented until after BJTs due to the limitations of semiconductor materials and the relative ease of manufacturing BJTs compared to FETs at the time.
Can you apply Norton's theorem in circuits containing diodes and BJTs?
Yes, of course but you must first expand the devices to equivalent circuit models of the appropriate approximation level to get reasonable answers. Such equivalent circuit models will have anywhere from 3 or 4 components to dozens depending on approximation level.
What are the mirror circuits?
ANSWER (current mirror) A current mirror circuit uses an amplifier to copy a current flowing in one leg of the circuit into another leg. One common arrangement uses four BJTs (two NPNs and two PNPs) and two resistors. Others are more or less complicated depending on linearity and temperature stability required for the application.
What parts are used in inverters?
MAJOR COMPONENTS OF AN INVERTER An inverter design and components vary with requirements but following components are most commonly used in designing an inverter. 1. MICROCONTROLLER Microcontroller is the main and integral part of an inverter. The main working of microcontroller is to control the switching of signals according to the requirements. A single microcontroller can perform multiple functions (e.g.) generating PWM for switching, controlling the protection systems etc. There are various types and families of microcontrollers available in the market, for example : PIC family AVRs (ATMEGA series) Atmel Arduino FPga (etc) Depending on the design specifications, any microcontroller can be used. 2. BIPOLAR JUNCTION TRANSISTORS (BJTS) BJT or a bipolar junction transistor is a three layered device which is capable of controlling the current flow. In a BJT, a small current at the input of the device can control larger currents at the output. Thus, BJTs can amplify currents. They can be used as a relay driver, as a switch, as a constant current source, as an amplifier (etc.). 3. H-BRIDGE H -bridge is a topology in which four switching devices BJTs, MOSFETs or IGBTs are integrated together in a single circuit. The name H-Bridge is given to it because of the typical arrangement of this circuit. Mainly used switching devices in the H-bridge circuits are BJTs, MOSFETs or IGBTs. 4. MOSFETS The Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET) is a voltage controlled device and requires a very small input current. It is mainly used for switching of electronic signals as its switching speed is very high. It is the most commonly used FET in low-power high-frequency circuits. The MOSFET is composed of a channel of n-type or p-type semiconductor material, and is accordingly called an N-MOSFET or a P-MOSFET. 5. FILTERS At times it is desirable to have circuits capable of selectively filtering one frequency or range of frequencies out of a mix of different frequencies in a circuit. A circuit designed to perform this frequency selection is called a filter circuit.
Advantages of fet over bjt?
mainly i will tell ttwo advantages:- 1)in FET "thermal runaway" never occurs but in bjt it occurs easily...thermal runaway means overheating and damage of fet due to different biasing voltages.. 2) since FET is a unipolar device so only one carrier type is required here ,but bjt is a bipolar device .. 3) FET is smaller in size than BJT of same rating. i mean to say that at the place of 10 bjts we can use 90 FETs ..so area cosumption is less
Is it possible idenfiying bjt and fet on the circuit?
Identifying BJTs and FETs on the circuitIt is in fact possible to identify transistors in circuits. However, this depends on one's familiarity with the different types of BJT and FET constructions. Since the transistor is a three-terminal device, it is easy to differentiate it from other circuit elements such as resistors, capacitors and inductorswhich are all two-terminal devices. The only exceptions to this may include regulators; which though are not transistors are provided with three terminals.
What are the main differences between FETs and BJTs in terms of voltage gain?
Bipolar Junction Transistorscurrent controlleduse both holes and electrons as carriershave three terminals called the emitter, base, and collectoronly available in one mode of operationField-Effect Transistorsvoltage controlled (like vacuum tubes)use either holes or electrons as carriers, not bothhave three or four terminals called the source, gate, drain and sometimes substrateavailable in either enhancement mode or depletion mode of operation
Are the Bipolar Junction Transistor and the Transistor the same thing?
Sort of. The Bipolar Junction Transistor, or BJT, is a type of transistor. But the term transistor applies to a much wider family of components than just the Standard BJT. A rough list of the other common types of transistors includes:Field effect transistors, or FETs, including both Junction types and Metal-oxide Semiconductor types: JFETs and MOSFETs. and also UJTs or unijunction transistors.In a basic electronics course, though, if you say just 'transistors' it is assumed you mean BJTs.
