* basic physics -- a voltage applied across a junction or an insulator will produce some current, no matter how small. No perfect insulator exists in electronics.
* defects in manufacturers -- undesirable elements in a junction or an insulator, introduced during manufacturing and stay, will affect the normal current-voltage behavior
* unintended usage -- the voltage or current applied to an electronic component has gone beyond its spec
* damage -- the electronic component has suffered permanent damage due to excessive usage, abuse, or electrostatic discharge.
In common - emitter configuration when the base is open we observe some leakage current in the collector circuit this is called ICBO (leakage current in collector circuit with base open) . This is observed because the collector - base junction is reverse biased so there would be some minority charge carriers which flow constituting the leakage current(generally in micro amps).
A: Vce is the voltage across the transistor . Ie is the emitter current. Ico is the collector current with the base open. Or really the leakage.
FET stands for Field Effect Transistor. The name FET comes because the gate current of a field effect transistor is zero and current present in the source conductor is due to an electric field produced by the substrate material placed between the gate and the source.
A: Dissimilar metal will exhibits a voltage output like thermocouple materials. But no current does not flow not unless there is a force to make it flow on a circuit or transistor
by measuring the insulation resistance then by usig the formula for finding leakage current leakage current =voltage applied /resistance measured by megger.
A dependent source is a source that is dependent on, i.e. a function of, some other thing in the circuit. Often, a transistor is represented as a dependent current source, with collector-emitter current being dependent on base-emitter current times hFe, or beta-gain, limited by the collector-emitter resistor network.
The current of the minority charges (collector region) is the source of the leakage current. At higher temperature, this leakage current increases due to increase in thermal energy.
A: Vce is the voltage across the transistor . Ie is the emitter current. Ico is the collector current with the base open. Or really the leakage.
A: All transistor experience some kind of leakage with the one of the three termianal open. it called Iceo.
The question is poorly phrased and needs a grammatical cleanup. If you mean to ask "what happens to the collector-emitter current of a transistor when the emitter-base junction is reverse biased" then the answer is that the transistor will turn off, and you will only see leakage current.
It reduces the leakage power. Increase the speed of operation. The technology will allow processors to run at lower voltages while at the same time limiting the amount of leakage current.
Common base transistor if the emitter is open current Ie=0 but a small collector current thus exist.this current is reversed biased collector to the base voltage it is represented by Icbo while common emitter is d base terminal is open circuit and the base junction is reversed biased current Icbo flow from the tcollector to the emitter in the external circuit this current is called leakage current.
Since the logic operations of depletion MOSFET is the opposite to the enhancement MOSFET, the depletion MOSFET produces positive logic circuits, such as, buffer, AND, and OR. The most significant advantage of the positive logic circuits is that it can produce positive feedback easily so that a single depletion MOSFET can become a memory cell. In contrast, you will need at least two enhancement MOSFET transistor to produce the positive feedback to build a memory cell. The other advantages of depletion MOSFET are that it is free from sub-threshold leakage current and gate-oxide leakage current. Since there is always a potential difference of Vdd between the gate terminal and channel for an enhancement MOSFET to cause the gate-oxide leakage current, the gate oxide leakage current is unavoidable when the transistor shrinks in size and oxide layer becomes thinner. The depletion MOSFET does not have this problem because there is no potential difference between the gate and channel. As a enhancement MOSFET shrinking in size, there is no way to stop the subthreshold leakage current diffused across from source to drain because the drain and source terminals are closer physically. This is not a problem for depletion MOSFET because a pinched channel will stop the diffusion current completely. The depletion MOSFET is the ideal, perfect transistor. The only disadvantage of depletion MOSFET is its inability to produce negative logic operations.
FET stands for Field Effect Transistor. The name FET comes because the gate current of a field effect transistor is zero and current present in the source conductor is due to an electric field produced by the substrate material placed between the gate and the source.
An ordinary junction transistor consists of two junctions. In effect a variation of the base to emitter current influences the reverse leakage current at the base to collector junction. The base being common to both junctions. A Field Effect Transistor uses an electric field to narrow the conductive channel thus varying its resistance. A FET has an extremely high input resistance compared with that of a standard junction transistor.
In low voltage and electronics Leakage Current is any current that flows when the ideal current
The active region of a transistor is when the transistor has sufficient base current to turn the transistor on and for a larger current to flow from emitter to collector. This is the region where the transistor is on and fully operating.
the collector voltage is lowered, because the collector is essentially a current source controlled by the base emitor current