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Advantages of silicon over germanium?
silicon has a wider bandgap than germenium .silicon jeakage current small, easily available then Ga and break down voltage is more. knee voltage of si is 0.7and Ga is having 0.3then Si is very useful.
How will differentiate silicon and germanium diode from a group of diodes?
Simple, Use the multi-meter , switch to the diode option then connect the positive wire to the positive of diode n negative to the negative ( +ve wire red, -ve wire black) if the there is a reading of =~0.7V then it is silicon. and if it is =~ 0.3V then it is germanium.
What does germanium do?
Germanium does no "do" anything.
Is germanium a conductor or an insulator?
neither, germanium is a semiconductor
What is basic material for making a transistor?
It is the middle portion of the transistor
What is the difference of silicon diode and germanium diode?
A silicon diode has a voltage drop of approximately 0.7V, while a germanium diode has a voltage drop of approximately 0.3V. Though germanium diodes are better in the area of forward voltage drop, silicon diodes are cheaper to produce and have higher breakdown voltages and current capabilities.
Why the breakdown voltage of silicon is 0.7V whereas for germanium it is 0.3V?
because germanium has lower energy gap between conduction and valence bands
Why silicon is preferred over other materials in designing ic?
because1) knee voltage of silicon is .7V where as germanium has .3V 2)silicon breakdown take place at around 200 0C and germanium at 90 0C
What is the cut in voltage of germanium and silicon diodes?
cut in voltage *** for silicon is 0.7volts and that for germanium is 0.3volts.According to Millman and Taub, "Pulse, Digital and Switching Waveforms", McGraw-Hill 1965, the cutin (or offset, break-point or threshold) voltage for a silicon diode is 0.6, and 0.2 for germanium.Breakdown voltage is another thing entirely. It is the reverse voltage at which the junction will break down.
Why the graph of breakdown voltage is cheaper than knee voltage?
Break down voltages happens at low voltages (.6 for silicon & .3 for germanium), whereas knee voltages at higher voltages. That's why its cheaper.
What is the threshold voltage of silicon and germanium?
In semiconductor uses, such as diodes and transistors, the forward voltage drop for Silicon (Si) is a little less than 0.7 volts, while the FVD for Germanium (Ge) is about 0.3 volts.
What is the value of the knee voltage and breakdown voltage of z?
It is about 0.7 volt for Silicon diodes.
What is more referred to use si diode or a ge diode?
silicon diode is preferred more when compared with germanium diode because in silicon diode the operating voltage is 0.7v where as in germanium diode the operating voltage is 0.3v , germanium is temperature sensitive so it can be easily destroyed by increasing temperature hence silicon diode is preferred more
Which type of diode having knee voltage of 0.7V to 0.3V?
Silicon = 0.7v : Germanium = 0.3v
Why silicon prefer to germiniuam?
Four reasons. First, it is a LOT cheaper and easier to get silicon. Germanium is a trace element in rocks. You need to mine and process lots of rock to get any germanium. Silicon is also known as sand--very easy to find. Second, germanium is heat sensitive. It's harder to solder a germanium device in than a silicon one because the heat can mess up the germanium. Germanium devices pretty much have to be soldered in by hand because you have to heat sink them, whereas silicon devices can be soldered in a soldering machine. Third, germanium's hazardous and silicon is generally not. People eat off glass plates, which are made from silicon. They do NOT eat from germanium plates, if they could even afford them. And fourth, germanium has a variable voltage drop--the higher the voltage, the greater the drop. If you pump 5000 volts into a silicon diode, you're going to get 4999.3v out the other side.
Why is the reverse saturation current of germanium diode more than silicon?
Germanium has four number of shells while Silicon has three number of shell. therefore for germanium less energy is required to move the electron from valence band to conduction band if compared to silicon. So at room temperature for germanium their are more number of electrons present in conduction bond hence more number of holes present in the valence energy band. Due to movement of holes reverse saturation current is produced. Their is more number of hole movement in germanium comparatively therefore reverse saturation current is more than silicon for germanium. You may refer to Electronic Devices and Circuits by Allen Mottershead Regards, Zain Ijaz UCTI, Malaysia Mechatronic Engineer.
Does the material of the diode depends on break down voltage?
A Germanium diode has a much lower breakdown voltage than a silicone diode.
