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How does doping effect the depletion layer in semiconductor?
Width of depletion layer is given by x = (2*ebsylum*Vb).5/(qN) x = width Vb = potential barrier q = charge of electron N = doping concentration. Thus increase in doping will reduce width of depletion layer.
What is another name for depletion mode transistor?
depletion layer depletion zone juntion region space charge region bipolar transistor field effect transistor variable capacitance diode
Why Reduction in Depletion region width with increase in doping?
Because Reverse bias constrained the majority carries to repel from both side (P side & N side)hence Depletion layer is formed with a large extant of majority carriers hence the depletion region is wider in reverse bias.
Why depletion layer width at the collector junction are more than the depletion layer width at the emitter junction?
The depletion layer width at the collector junction is typically wider than that at the emitter junction due to the differences in doping concentrations. The collector region is generally lightly doped compared to the heavily doped emitter region, resulting in a larger electric field and a broader depletion region. Additionally, the collector junction must accommodate a higher reverse bias, which further expands the depletion region to maintain charge neutrality and facilitate efficient charge separation.
How punchthrough risks can be reduced?
A simple way to reduce the punchthrough effect is to increase the overall bulk doping level. As a result the drain and source depletion regions will become smaller.
How does the depletion region in field effect transistor increases when forward biased?
Because the bulk charge and surface charge interacting with electric field (forward bias) creates the depletion region.
Why base spreading resistance is not considered at low frequencies?
Base spreading resistance depends on doping of the p-n junction and also the width of depletion region of the p-n junction. Thats what i knw.
What is the effect on threshold voltage of a mos capacitor on increasing substrate doping concentration?
The threshold voltage will be increased (in case of an N-Mos), because the charge in the depletion region formed under the channel will be more (high density) and hence gate voltage has to overcome this charge for strong inversion. Vt = (work function difference of gate and substrate) + 2*(substrate Fermi voltage) + (Qd/Cox) Where, Qd = charge in Depletion region in Coulomb Cox = Oxide capacitance
What is significance of depletion region?
Depletion region is the region where current carriers such as electrons and holes are absent.
How can breakdown voltage of a diode be controlled?
The breakdown voltage of a diode can be controlled by altering its doping concentration and the thickness of the depletion region. Increasing doping levels generally leads to a lower breakdown voltage, while a wider depletion region can increase it. Additionally, the diode's material properties and structural design, such as using different semiconductor materials or introducing guard rings, can also influence the breakdown voltage. By carefully engineering these factors, manufacturers can create diodes with specific breakdown voltage characteristics to suit various applications.
What will happen to the depletion region when the P-N junction is supplied by forward bias?
depletion region will decrease.
What happens in the depletion region in reverse bias?
in forward biasing depletion region width decreases and in reverse biasing it increases .
